SEMICONDUCTOR DEVICE HAVING CAPACITOR

The present invention relates to a semiconductor device including a first electrode on a substrate. A capacitor dielectric layer is disposed on the first electrode. A second electrode is disposed on the capacitor dielectric layer. A first insulating layer is provided on the first and second electrod...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AHN JEONG HOON, DING SHAOFENG
Format: Patent
Sprache:eng ; kor
Schlagworte:
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