SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME
The present disclosure relates to a semiconductor package substrate capable of forming a backside redistribution layer in a fine pattern by minimizing the thickness of an encapsulant. The semiconductor package substrate comprises: a semiconductor chip having a connection pad; an encapsulant covering...
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creator | KO TAE HO JUNG HYUN CHUL HONG MYEONG HO LEE DAE HEE |
description | The present disclosure relates to a semiconductor package substrate capable of forming a backside redistribution layer in a fine pattern by minimizing the thickness of an encapsulant. The semiconductor package substrate comprises: a semiconductor chip having a connection pad; an encapsulant covering at least a part of the semiconductor chip; a connection structure disposed on the semiconductor chip and the encapsulant, and including a redistribution layer electrically connected to the connection pad; a first passivation layer disposed on the connection structure; and an adhesive layer disposed on at least one of the upper surface of the encapsulant and the lower surface of the first passivation layer outside the semiconductor chip.
본 개시는 접속패드를 갖는 반도체 칩, 반도체 칩의 적어도 일부를 덮는 봉합재, 반도체 칩 및 봉합재 상에 배치되며 접속패드와 전기적으로 연결된 재배선층을 포함하는 연결구조체, 연결구조체 상에 배치된 제1 패시베이션층, 및 반도체 칩의 외측에서, 봉합재의 상면 및 제1 패시베이션층의 하면 중 적어도 하나 상에 배치되는 접착층을 포함하는 반도체 패키지 기판에 관한 것이다. |
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본 개시는 접속패드를 갖는 반도체 칩, 반도체 칩의 적어도 일부를 덮는 봉합재, 반도체 칩 및 봉합재 상에 배치되며 접속패드와 전기적으로 연결된 재배선층을 포함하는 연결구조체, 연결구조체 상에 배치된 제1 패시베이션층, 및 반도체 칩의 외측에서, 봉합재의 상면 및 제1 패시베이션층의 하면 중 적어도 하나 상에 배치되는 접착층을 포함하는 반도체 패키지 기판에 관한 것이다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201007&DB=EPODOC&CC=KR&NR=20200114314A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201007&DB=EPODOC&CC=KR&NR=20200114314A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KO TAE HO</creatorcontrib><creatorcontrib>JUNG HYUN CHUL</creatorcontrib><creatorcontrib>HONG MYEONG HO</creatorcontrib><creatorcontrib>LEE DAE HEE</creatorcontrib><title>SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME</title><description>The present disclosure relates to a semiconductor package substrate capable of forming a backside redistribution layer in a fine pattern by minimizing the thickness of an encapsulant. The semiconductor package substrate comprises: a semiconductor chip having a connection pad; an encapsulant covering at least a part of the semiconductor chip; a connection structure disposed on the semiconductor chip and the encapsulant, and including a redistribution layer electrically connected to the connection pad; a first passivation layer disposed on the connection structure; and an adhesive layer disposed on at least one of the upper surface of the encapsulant and the lower surface of the first passivation layer outside the semiconductor chip.
본 개시는 접속패드를 갖는 반도체 칩, 반도체 칩의 적어도 일부를 덮는 봉합재, 반도체 칩 및 봉합재 상에 배치되며 접속패드와 전기적으로 연결된 재배선층을 포함하는 연결구조체, 연결구조체 상에 배치된 제1 패시베이션층, 및 반도체 칩의 외측에서, 봉합재의 상면 및 제1 패시베이션층의 하면 중 적어도 하나 상에 배치되는 접착층을 포함하는 반도체 패키지 기판에 관한 것이다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEgIdvX1dPb3cwl1DvEPUghwdPZ2dHdVCA51Cg4JcgxxVXD0c1HwdQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1fArjc0GCQX4gE0xdHXlYeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxHsHGRkYGRgYGpoYG5o4GhOnCgBiHTRE</recordid><startdate>20201007</startdate><enddate>20201007</enddate><creator>KO TAE HO</creator><creator>JUNG HYUN CHUL</creator><creator>HONG MYEONG HO</creator><creator>LEE DAE HEE</creator><scope>EVB</scope></search><sort><creationdate>20201007</creationdate><title>SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME</title><author>KO TAE HO ; JUNG HYUN CHUL ; HONG MYEONG HO ; LEE DAE HEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200114314A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KO TAE HO</creatorcontrib><creatorcontrib>JUNG HYUN CHUL</creatorcontrib><creatorcontrib>HONG MYEONG HO</creatorcontrib><creatorcontrib>LEE DAE HEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KO TAE HO</au><au>JUNG HYUN CHUL</au><au>HONG MYEONG HO</au><au>LEE DAE HEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME</title><date>2020-10-07</date><risdate>2020</risdate><abstract>The present disclosure relates to a semiconductor package substrate capable of forming a backside redistribution layer in a fine pattern by minimizing the thickness of an encapsulant. The semiconductor package substrate comprises: a semiconductor chip having a connection pad; an encapsulant covering at least a part of the semiconductor chip; a connection structure disposed on the semiconductor chip and the encapsulant, and including a redistribution layer electrically connected to the connection pad; a first passivation layer disposed on the connection structure; and an adhesive layer disposed on at least one of the upper surface of the encapsulant and the lower surface of the first passivation layer outside the semiconductor chip.
본 개시는 접속패드를 갖는 반도체 칩, 반도체 칩의 적어도 일부를 덮는 봉합재, 반도체 칩 및 봉합재 상에 배치되며 접속패드와 전기적으로 연결된 재배선층을 포함하는 연결구조체, 연결구조체 상에 배치된 제1 패시베이션층, 및 반도체 칩의 외측에서, 봉합재의 상면 및 제1 패시베이션층의 하면 중 적어도 하나 상에 배치되는 접착층을 포함하는 반도체 패키지 기판에 관한 것이다.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME |
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