Etching composition and etching method using the same
The present invention relates to an etching composition and a method of etching a metal film using the same, and more specifically, to an etching composition for improving etching characteristics of a single metal layer or a multi metal layer, a method of etching a metal layer using the same, and a...
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| creator | PARK JONG MO LEE MYUNG HAN KIM SE HOON LEE YOUG JUN CHI SANG WON AHN HO WON |
| description | The present invention relates to an etching composition and a method of etching a metal film using the same, and more specifically, to an etching composition for improving etching characteristics of a single metal layer or a multi metal layer, a method of etching a metal layer using the same, and a method of manufacturing a semiconductor device, including a process performed using the etching composition of the present invention. The etching composition includes: hydrogen peroxide; etching additives such as phosphoric acid compounds and sulfuric acid compounds; pH regulator; fluorine compounds; undercut inhibitors that are adenine, guanine, or mixtures thereof; amine compounds; and the remaining amount of water.
본 발명은 식각 조성물 및 이를 이용하는 금속막의 식각방법에 관한 것으로, 상세하게는 단일금속막 또는 다중금속막의 식각 특성을 향상시키는 식각 조성물, 이를 이용하는 금속막의 식각방법 및 본 발명의 식각 조성물을 이용하여 수행되는 공정을 포함하는 반도체 소자의 제조방법을 제공한다. |
| format | Patent |
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본 발명은 식각 조성물 및 이를 이용하는 금속막의 식각방법에 관한 것으로, 상세하게는 단일금속막 또는 다중금속막의 식각 특성을 향상시키는 식각 조성물, 이를 이용하는 금속막의 식각방법 및 본 발명의 식각 조성물을 이용하여 수행되는 공정을 포함하는 반도체 소자의 제조방법을 제공한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201005&DB=EPODOC&CC=KR&NR=20200112674A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201005&DB=EPODOC&CC=KR&NR=20200112674A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK JONG MO</creatorcontrib><creatorcontrib>LEE MYUNG HAN</creatorcontrib><creatorcontrib>KIM SE HOON</creatorcontrib><creatorcontrib>LEE YOUG JUN</creatorcontrib><creatorcontrib>CHI SANG WON</creatorcontrib><creatorcontrib>AHN HO WON</creatorcontrib><title>Etching composition and etching method using the same</title><description>The present invention relates to an etching composition and a method of etching a metal film using the same, and more specifically, to an etching composition for improving etching characteristics of a single metal layer or a multi metal layer, a method of etching a metal layer using the same, and a method of manufacturing a semiconductor device, including a process performed using the etching composition of the present invention. The etching composition includes: hydrogen peroxide; etching additives such as phosphoric acid compounds and sulfuric acid compounds; pH regulator; fluorine compounds; undercut inhibitors that are adenine, guanine, or mixtures thereof; amine compounds; and the remaining amount of water.
본 발명은 식각 조성물 및 이를 이용하는 금속막의 식각방법에 관한 것으로, 상세하게는 단일금속막 또는 다중금속막의 식각 특성을 향상시키는 식각 조성물, 이를 이용하는 금속막의 식각방법 및 본 발명의 식각 조성물을 이용하여 수행되는 공정을 포함하는 반도체 소자의 제조방법을 제공한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB1LUnOyMxLV0jOzy3IL84syczPU0jMS1FIhYrnppZk5KcolBaDOCUZqQrFibmpPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7Uk3jvIyMDIwMDQ0MjM3MTRmDhVABU3LeM</recordid><startdate>20201005</startdate><enddate>20201005</enddate><creator>PARK JONG MO</creator><creator>LEE MYUNG HAN</creator><creator>KIM SE HOON</creator><creator>LEE YOUG JUN</creator><creator>CHI SANG WON</creator><creator>AHN HO WON</creator><scope>EVB</scope></search><sort><creationdate>20201005</creationdate><title>Etching composition and etching method using the same</title><author>PARK JONG MO ; LEE MYUNG HAN ; KIM SE HOON ; LEE YOUG JUN ; CHI SANG WON ; AHN HO WON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200112674A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK JONG MO</creatorcontrib><creatorcontrib>LEE MYUNG HAN</creatorcontrib><creatorcontrib>KIM SE HOON</creatorcontrib><creatorcontrib>LEE YOUG JUN</creatorcontrib><creatorcontrib>CHI SANG WON</creatorcontrib><creatorcontrib>AHN HO WON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK JONG MO</au><au>LEE MYUNG HAN</au><au>KIM SE HOON</au><au>LEE YOUG JUN</au><au>CHI SANG WON</au><au>AHN HO WON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Etching composition and etching method using the same</title><date>2020-10-05</date><risdate>2020</risdate><abstract>The present invention relates to an etching composition and a method of etching a metal film using the same, and more specifically, to an etching composition for improving etching characteristics of a single metal layer or a multi metal layer, a method of etching a metal layer using the same, and a method of manufacturing a semiconductor device, including a process performed using the etching composition of the present invention. The etching composition includes: hydrogen peroxide; etching additives such as phosphoric acid compounds and sulfuric acid compounds; pH regulator; fluorine compounds; undercut inhibitors that are adenine, guanine, or mixtures thereof; amine compounds; and the remaining amount of water.
본 발명은 식각 조성물 및 이를 이용하는 금속막의 식각방법에 관한 것으로, 상세하게는 단일금속막 또는 다중금속막의 식각 특성을 향상시키는 식각 조성물, 이를 이용하는 금속막의 식각방법 및 본 발명의 식각 조성물을 이용하여 수행되는 공정을 포함하는 반도체 소자의 제조방법을 제공한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Etching composition and etching method using the same |
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