A ENCAPSULATION LAYER OF SILICON-METAL OXIDE CONTAINING A METAL OR A METAL OXIDE IN A THIN-FILM AND THE METHOD THEREOF

The present invention relates to a silicon oxide encapsulation film containing a metal or metal oxide and a method of manufacturing the same. According to the present invention, the silicon oxide encapsulation film has a high thin film growth rate and a low penetration rate of moisture and oxygen, h...

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Bibliographische Detailangaben
Hauptverfasser:	PARK JEONG JOO, CHO A RA, PARK GUN JOO, LEE SAM DONG, KIM MYONG WOON, KIM SUNG GI, LIM HAENG DON, YANG BYEONG IL, LEE SANG ICK, CHAE WON MOOK, JEON SANG YONG, JANG SE JIN, PARK JOONG JIN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a silicon oxide encapsulation film containing a metal or metal oxide and a method of manufacturing the same. According to the present invention, the silicon oxide encapsulation film has a high thin film growth rate and a low penetration rate of moisture and oxygen, has excellent sealing effects even at thin thickness, and may adjust the stress intensity and a refractive index, thereby easily manufacturing a high-quality silicon metal oxide encapsulation film applicable to a flexible display. 본 발명은 금속 또는 금속 산화물을 포함하는 실리콘 산화물 봉지막 및 이의 제조방법에 관한 것으로, 본 발명에 따른 실리콘 금속 산화물 봉지막은 높은 박막 성장률 및 수분 및 산소의 침투율이 낮아 얇은 두께에서도 밀봉 효과가 매우 우수할 뿐 아니라 응력 강도 및 굴절률 조절이 가능하여 유연한 디스플레이에 적용할 수 있는 고품질의 실리콘 금속 산화물 봉지막을 용이하게 제조할 수 있다.