TARGET FOR LASER PRODUCED PLASMA EXTREME ULTRAVIOLET LIGHT SOURCE
EUV(extreme ultraviolet) 광을 발생하는 기술은, 변형된 액적(modified droplet)을 형성하기 위해, 타겟 재료 액적의 형상을 변경하기에 충분한 에너지를 갖는 제1 방사선 펄스를 타겟 재료 액적 쪽으로 지향시키는 단계와, 흡수 재료를 형성하기 위해, 변형된 액적의 특성을 바꾸기에 충분한 에너지를 갖는 제2 방사선 펄스를 변형된 액적 쪽으로 지향시키는 단계로서, 이 특성은 방사선의 흡수에 관련되는, 제2 방사선 펄스를 지향시키는 단계와, 흡수 재료의 적어도 일부분을 극자외(EUV) 광으로 변환하기에 충분한...
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| creator | RAFAC ROBERT J TAO YEZHENG |
| description | EUV(extreme ultraviolet) 광을 발생하는 기술은, 변형된 액적(modified droplet)을 형성하기 위해, 타겟 재료 액적의 형상을 변경하기에 충분한 에너지를 갖는 제1 방사선 펄스를 타겟 재료 액적 쪽으로 지향시키는 단계와, 흡수 재료를 형성하기 위해, 변형된 액적의 특성을 바꾸기에 충분한 에너지를 갖는 제2 방사선 펄스를 변형된 액적 쪽으로 지향시키는 단계로서, 이 특성은 방사선의 흡수에 관련되는, 제2 방사선 펄스를 지향시키는 단계와, 흡수 재료의 적어도 일부분을 극자외(EUV) 광으로 변환하기에 충분한 에너지를 갖는 증폭 광빔을 상기 흡수 재료 쪽으로 지향시키는 단계를 포함한다.
Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light. |
| format | Patent |
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Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GAMMA RAY OR X-RAY MICROSCOPES ; HOLOGRAPHY ; IRRADIATION DEVICES ; MATERIALS THEREFOR ; NUCLEAR ENGINEERING ; NUCLEAR PHYSICS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR ; X-RAY TECHNIQUE</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200907&DB=EPODOC&CC=KR&NR=20200105546A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200907&DB=EPODOC&CC=KR&NR=20200105546A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAFAC ROBERT J</creatorcontrib><creatorcontrib>TAO YEZHENG</creatorcontrib><title>TARGET FOR LASER PRODUCED PLASMA EXTREME ULTRAVIOLET LIGHT SOURCE</title><description>EUV(extreme ultraviolet) 광을 발생하는 기술은, 변형된 액적(modified droplet)을 형성하기 위해, 타겟 재료 액적의 형상을 변경하기에 충분한 에너지를 갖는 제1 방사선 펄스를 타겟 재료 액적 쪽으로 지향시키는 단계와, 흡수 재료를 형성하기 위해, 변형된 액적의 특성을 바꾸기에 충분한 에너지를 갖는 제2 방사선 펄스를 변형된 액적 쪽으로 지향시키는 단계로서, 이 특성은 방사선의 흡수에 관련되는, 제2 방사선 펄스를 지향시키는 단계와, 흡수 재료의 적어도 일부분을 극자외(EUV) 광으로 변환하기에 충분한 에너지를 갖는 증폭 광빔을 상기 흡수 재료 쪽으로 지향시키는 단계를 포함한다.
Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>GAMMA RAY OR X-RAY MICROSCOPES</subject><subject>HOLOGRAPHY</subject><subject>IRRADIATION DEVICES</subject><subject>MATERIALS THEREFOR</subject><subject>NUCLEAR ENGINEERING</subject><subject>NUCLEAR PHYSICS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><subject>X-RAY TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAMcQxydw1RcPMPUvBxDHYNUggI8ncJdXZ1UQgA8n0dFVwjQoJcfV0VQn1CghzDPP19gKp9PN09QhSC_UODnF15GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgZGBgaGBqamJmaMxcaoAkoYr7Q</recordid><startdate>20200907</startdate><enddate>20200907</enddate><creator>RAFAC ROBERT J</creator><creator>TAO YEZHENG</creator><scope>EVB</scope></search><sort><creationdate>20200907</creationdate><title>TARGET FOR LASER PRODUCED PLASMA EXTREME ULTRAVIOLET LIGHT SOURCE</title><author>RAFAC ROBERT J ; TAO YEZHENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200105546A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>GAMMA RAY OR X-RAY MICROSCOPES</topic><topic>HOLOGRAPHY</topic><topic>IRRADIATION DEVICES</topic><topic>MATERIALS THEREFOR</topic><topic>NUCLEAR ENGINEERING</topic><topic>NUCLEAR PHYSICS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</topic><topic>X-RAY TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>RAFAC ROBERT J</creatorcontrib><creatorcontrib>TAO YEZHENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAFAC ROBERT J</au><au>TAO YEZHENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TARGET FOR LASER PRODUCED PLASMA EXTREME ULTRAVIOLET LIGHT SOURCE</title><date>2020-09-07</date><risdate>2020</risdate><abstract>EUV(extreme ultraviolet) 광을 발생하는 기술은, 변형된 액적(modified droplet)을 형성하기 위해, 타겟 재료 액적의 형상을 변경하기에 충분한 에너지를 갖는 제1 방사선 펄스를 타겟 재료 액적 쪽으로 지향시키는 단계와, 흡수 재료를 형성하기 위해, 변형된 액적의 특성을 바꾸기에 충분한 에너지를 갖는 제2 방사선 펄스를 변형된 액적 쪽으로 지향시키는 단계로서, 이 특성은 방사선의 흡수에 관련되는, 제2 방사선 펄스를 지향시키는 단계와, 흡수 재료의 적어도 일부분을 극자외(EUV) 광으로 변환하기에 충분한 에너지를 갖는 증폭 광빔을 상기 흡수 재료 쪽으로 지향시키는 단계를 포함한다.
Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR X-RAY TECHNIQUE |
| title | TARGET FOR LASER PRODUCED PLASMA EXTREME ULTRAVIOLET LIGHT SOURCE |
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