EUV Method of fabricating EUV lithography pellicle film and apparatus of fabricating the same
According to one embodiment of the present invention, a process for fabricating an EUV lithography pellicle thin film comprises the steps of: on a structure provided with a silicon substrate and a silicon nitride membrane thin film formed on the silicon substrate, using a KOH solution to conduct wet...
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| creator | LEE GI SUNG PARK NAM SOO SEO CHANG HO HWANG HAE CHUL KANG HEE OH |
| description | According to one embodiment of the present invention, a process for fabricating an EUV lithography pellicle thin film comprises the steps of: on a structure provided with a silicon substrate and a silicon nitride membrane thin film formed on the silicon substrate, using a KOH solution to conduct wet etching on at least a portion of the silicon substrate; rinsing the wet-etched structure by immersing the same in deionized water (DIW); forming an isopropyl alcohol (IPA) layer on the surface of the DIW; and drying the silicon nitride membrane thin film by separating the structure from the DIW by passing the structure through the IPA layer.
본 발명의 일 실시예에 의한 EUV 리소그래피 펠리클 박막의 제조 방법은 KOH 용액을 이용하여, 실리콘 기판 및 상기 실리콘 기판 상에 형성된 실리콘 나이트라이드 멤브레인 박막을 구비하는 구조체 중에서 상기 실리콘 기판의 적어도 일부를, 습식각하는 단계; 습식각된 상기 구조체를 탈이온수(DIW)에 침지하여 세정(rinse)하는 단계; 상기 탈이온수의 표면에 이소프로필알콜(IPA)층을 형성하는 단계; 및 상기 구조체를 상기 이소프로필알콜층을 거치면서 상기 탈이온수로부터 분리함으로써, 상기 실리콘 나이트라이드 멤브레인 박막을 건조시키는 단계;를 포함한다. |
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본 발명의 일 실시예에 의한 EUV 리소그래피 펠리클 박막의 제조 방법은 KOH 용액을 이용하여, 실리콘 기판 및 상기 실리콘 기판 상에 형성된 실리콘 나이트라이드 멤브레인 박막을 구비하는 구조체 중에서 상기 실리콘 기판의 적어도 일부를, 습식각하는 단계; 습식각된 상기 구조체를 탈이온수(DIW)에 침지하여 세정(rinse)하는 단계; 상기 탈이온수의 표면에 이소프로필알콜(IPA)층을 형성하는 단계; 및 상기 구조체를 상기 이소프로필알콜층을 거치면서 상기 탈이온수로부터 분리함으로써, 상기 실리콘 나이트라이드 멤브레인 박막을 건조시키는 단계;를 포함한다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200831&DB=EPODOC&CC=KR&NR=20200102250A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200831&DB=EPODOC&CC=KR&NR=20200102250A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE GI SUNG</creatorcontrib><creatorcontrib>PARK NAM SOO</creatorcontrib><creatorcontrib>SEO CHANG HO</creatorcontrib><creatorcontrib>HWANG HAE CHUL</creatorcontrib><creatorcontrib>KANG HEE OH</creatorcontrib><title>EUV Method of fabricating EUV lithography pellicle film and apparatus of fabricating the same</title><description>According to one embodiment of the present invention, a process for fabricating an EUV lithography pellicle thin film comprises the steps of: on a structure provided with a silicon substrate and a silicon nitride membrane thin film formed on the silicon substrate, using a KOH solution to conduct wet etching on at least a portion of the silicon substrate; rinsing the wet-etched structure by immersing the same in deionized water (DIW); forming an isopropyl alcohol (IPA) layer on the surface of the DIW; and drying the silicon nitride membrane thin film by separating the structure from the DIW by passing the structure through the IPA layer.
본 발명의 일 실시예에 의한 EUV 리소그래피 펠리클 박막의 제조 방법은 KOH 용액을 이용하여, 실리콘 기판 및 상기 실리콘 기판 상에 형성된 실리콘 나이트라이드 멤브레인 박막을 구비하는 구조체 중에서 상기 실리콘 기판의 적어도 일부를, 습식각하는 단계; 습식각된 상기 구조체를 탈이온수(DIW)에 침지하여 세정(rinse)하는 단계; 상기 탈이온수의 표면에 이소프로필알콜(IPA)층을 형성하는 단계; 및 상기 구조체를 상기 이소프로필알콜층을 거치면서 상기 탈이온수로부터 분리함으로써, 상기 실리콘 나이트라이드 멤브레인 박막을 건조시키는 단계;를 포함한다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEKAjEQANNYiPqHBWshRnyAyIkgNqJ2cqy5zSWwlyxJLPy9ClZWVlPMzFjdmssVjlR96iA5cHjPwWINsYeP4fA2fUbxTxBiDpYJXOABMHaAIpixPsrvWj1BwYGmauSQC82-nKj5rjlv9wuS1FIRtBSptoeT0UbrpTZmrTer_6oXTjw8Aw</recordid><startdate>20200831</startdate><enddate>20200831</enddate><creator>LEE GI SUNG</creator><creator>PARK NAM SOO</creator><creator>SEO CHANG HO</creator><creator>HWANG HAE CHUL</creator><creator>KANG HEE OH</creator><scope>EVB</scope></search><sort><creationdate>20200831</creationdate><title>EUV Method of fabricating EUV lithography pellicle film and apparatus of fabricating the same</title><author>LEE GI SUNG ; PARK NAM SOO ; SEO CHANG HO ; HWANG HAE CHUL ; KANG HEE OH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200102250A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE GI SUNG</creatorcontrib><creatorcontrib>PARK NAM SOO</creatorcontrib><creatorcontrib>SEO CHANG HO</creatorcontrib><creatorcontrib>HWANG HAE CHUL</creatorcontrib><creatorcontrib>KANG HEE OH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE GI SUNG</au><au>PARK NAM SOO</au><au>SEO CHANG HO</au><au>HWANG HAE CHUL</au><au>KANG HEE OH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EUV Method of fabricating EUV lithography pellicle film and apparatus of fabricating the same</title><date>2020-08-31</date><risdate>2020</risdate><abstract>According to one embodiment of the present invention, a process for fabricating an EUV lithography pellicle thin film comprises the steps of: on a structure provided with a silicon substrate and a silicon nitride membrane thin film formed on the silicon substrate, using a KOH solution to conduct wet etching on at least a portion of the silicon substrate; rinsing the wet-etched structure by immersing the same in deionized water (DIW); forming an isopropyl alcohol (IPA) layer on the surface of the DIW; and drying the silicon nitride membrane thin film by separating the structure from the DIW by passing the structure through the IPA layer.
본 발명의 일 실시예에 의한 EUV 리소그래피 펠리클 박막의 제조 방법은 KOH 용액을 이용하여, 실리콘 기판 및 상기 실리콘 기판 상에 형성된 실리콘 나이트라이드 멤브레인 박막을 구비하는 구조체 중에서 상기 실리콘 기판의 적어도 일부를, 습식각하는 단계; 습식각된 상기 구조체를 탈이온수(DIW)에 침지하여 세정(rinse)하는 단계; 상기 탈이온수의 표면에 이소프로필알콜(IPA)층을 형성하는 단계; 및 상기 구조체를 상기 이소프로필알콜층을 거치면서 상기 탈이온수로부터 분리함으로써, 상기 실리콘 나이트라이드 멤브레인 박막을 건조시키는 단계;를 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | EUV Method of fabricating EUV lithography pellicle film and apparatus of fabricating the same |
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