EUV Method of fabricating EUV lithography pellicle film and apparatus of fabricating the same

According to one embodiment of the present invention, a process for fabricating an EUV lithography pellicle thin film comprises the steps of: on a structure provided with a silicon substrate and a silicon nitride membrane thin film formed on the silicon substrate, using a KOH solution to conduct wet...

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Bibliographische Detailangaben
Hauptverfasser:	LEE GI SUNG, PARK NAM SOO, SEO CHANG HO, HWANG HAE CHUL, KANG HEE OH
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	According to one embodiment of the present invention, a process for fabricating an EUV lithography pellicle thin film comprises the steps of: on a structure provided with a silicon substrate and a silicon nitride membrane thin film formed on the silicon substrate, using a KOH solution to conduct wet etching on at least a portion of the silicon substrate; rinsing the wet-etched structure by immersing the same in deionized water (DIW); forming an isopropyl alcohol (IPA) layer on the surface of the DIW; and drying the silicon nitride membrane thin film by separating the structure from the DIW by passing the structure through the IPA layer. 본 발명의 일 실시예에 의한 EUV 리소그래피 펠리클 박막의 제조 방법은 KOH 용액을 이용하여, 실리콘 기판 및 상기 실리콘 기판 상에 형성된 실리콘 나이트라이드 멤브레인 박막을 구비하는 구조체 중에서 상기 실리콘 기판의 적어도 일부를, 습식각하는 단계; 습식각된 상기 구조체를 탈이온수(DIW)에 침지하여 세정(rinse)하는 단계; 상기 탈이온수의 표면에 이소프로필알콜(IPA)층을 형성하는 단계; 및 상기 구조체를 상기 이소프로필알콜층을 거치면서 상기 탈이온수로부터 분리함으로써, 상기 실리콘 나이트라이드 멤브레인 박막을 건조시키는 단계;를 포함한다.