NANOWIRE TRANSISTOR AND MULTI VALUE LOGIC DEVICE INCLUDED THEREIN

Disclosed are a nanowire transistor which performs an NT operation at room temperature and has three ports, and a multi-value logic device including the same. The nanowire transistor has a cylindrical shape having a diameter of 30 nm to 100 nm, and comprises a nanowire core doped with impurities, an...

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Bibliographische Detailangaben
Hauptverfasser: LEE JUN HYEOK, SON DONG HYEOK, LEE JUNG HEE, KIM JEONG GIL
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:Disclosed are a nanowire transistor which performs an NT operation at room temperature and has three ports, and a multi-value logic device including the same. The nanowire transistor has a cylindrical shape having a diameter of 30 nm to 100 nm, and comprises a nanowire core doped with impurities, an electron trap layer placed outside the nanowire core, and a gate placed outside the electron trap layer. 나노선 트랜지스터 및 이를 포함하는 다치 논리 소자가 개시된다. 나노선 트랜지스터는 직경 30 nm 내지 100 nm인 원기둥 형태이고, 불순물이 도핑된 나노선 코어, 나노선 코어의 외부에 위치하는 전자트랩층 및 전자트랩층의 외부에 위치하는 게이트를 포함한다.