SEMICONDUCTOR RESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

The present invention relates to a semiconductor photoresist composition comprising an organometallic copolymer comprising a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2, and a solvent; and a pattern forming method using the same. Detailed...

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Bibliographische Detailangaben
Hauptverfasser:	NA YOONG HEE, CHAE SEUNGYONG, KIM JAEHYUN, NAMGUNG RAN, MOON KYUNG SOO, HAN SEUNG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a semiconductor photoresist composition comprising an organometallic copolymer comprising a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2, and a solvent; and a pattern forming method using the same. Detailed description for chemical formula 1 and chemical formula 2 are defined in the specification. According to the present invention, the semiconductor photoresist composition has relatively improved etch resistance, sensitivity, and resolution. 하기 화학식 1로 표현되는 구조단위 및 하기 화학식 2로 표현되는 구조단위를 포함하는 유기금속공중합체 및 용매를 포함하는 반도체 포토 레지스트용 조성물과, 이를 이용한 패턴 형성 방법에 관한 것이다. [화학식 1][화학식 2]화학식 1, 화학식 2에 대한 구체적인 내용은 명세서 상에서 정의된 것과 같다.