Method of forming mask pattern and method of manufacturing semiconductor device using the same
The present invention relates to a method for forming a mask pattern having excellent flatness. The method for forming a mask pattern provides a substrate including patterns, forms a mask material film covering the patterns on the substrate, and removes an upper portion of the mask material film by...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a method for forming a mask pattern having excellent flatness. The method for forming a mask pattern provides a substrate including patterns, forms a mask material film covering the patterns on the substrate, and removes an upper portion of the mask material film by using a liquid material. The mask material film can include fluoride additives segregated on an upper portion thereof.
마스크 패턴의 형성 방법은 패턴들을 포함하는 기판을 제공하는 것, 상기 기판 상에 상기 패턴들을 덮는 마스크 물질막을 형성하는 것 및 액상 물질을 이용하여 상기 마스크 물질막의 상부를 제거하는 것을 포함하되,상기 마스크 물질막은 그 상부에 편석된 불소 첨가제를 포함할 수 있다. |
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