Thin film transistors and a method for fabricating the same
The present invention is to provide a thin film transistor with increased electrical performance by reducing an effective hole mass of a P-type oxide semiconductor and a method of fabricating the same. According to the present invention, the thin film transistor comprises: a source electrode; a drai...
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| creator | JAE KYEONG JEONG KIM TAIKYU BAEKEUN YOO |
| description | The present invention is to provide a thin film transistor with increased electrical performance by reducing an effective hole mass of a P-type oxide semiconductor and a method of fabricating the same. According to the present invention, the thin film transistor comprises: a source electrode; a drain electrode; and a channel layer connecting the source electrode and the drain electrode. The channel layer includes a tin-based oxide represented by SnMO, wherein the M includes at least one of a non-metal chalcogen element and a halogen element.
박막 트랜지스터는 소스 전극, 드레인 전극, 및 상기 소스 전극과 상기 드레인 전극을 연결하는 채널층을 포함한다. 상기 채널층은 SnMO로 표현되는 주석계 산화물(tin-based oxide)을 포함하고, 상기 M은 비금속 칼코겐 원소 및 할로겐 원소 중 적어도 하나를 포함한다. |
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박막 트랜지스터는 소스 전극, 드레인 전극, 및 상기 소스 전극과 상기 드레인 전극을 연결하는 채널층을 포함한다. 상기 채널층은 SnMO로 표현되는 주석계 산화물(tin-based oxide)을 포함하고, 상기 M은 비금속 칼코겐 원소 및 할로겐 원소 중 적어도 하나를 포함한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200715&DB=EPODOC&CC=KR&NR=20200085437A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200715&DB=EPODOC&CC=KR&NR=20200085437A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JAE KYEONG JEONG</creatorcontrib><creatorcontrib>KIM TAIKYU</creatorcontrib><creatorcontrib>BAEKEUN YOO</creatorcontrib><title>Thin film transistors and a method for fabricating the same</title><description>The present invention is to provide a thin film transistor with increased electrical performance by reducing an effective hole mass of a P-type oxide semiconductor and a method of fabricating the same. According to the present invention, the thin film transistor comprises: a source electrode; a drain electrode; and a channel layer connecting the source electrode and the drain electrode. The channel layer includes a tin-based oxide represented by SnMO, wherein the M includes at least one of a non-metal chalcogen element and a halogen element.
박막 트랜지스터는 소스 전극, 드레인 전극, 및 상기 소스 전극과 상기 드레인 전극을 연결하는 채널층을 포함한다. 상기 채널층은 SnMO로 표현되는 주석계 산화물(tin-based oxide)을 포함하고, 상기 M은 비금속 칼코겐 원소 및 할로겐 원소 중 적어도 하나를 포함한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAOycjMU0jLzMlVKClKzCvOLC7JLypWSMxLUUhUyE0tychPUUjLL1JIS0wqykxOLMnMS1coyUhVKE7MTeVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGRgYGBhamJsbmjsbEqQIAPdQv4A</recordid><startdate>20200715</startdate><enddate>20200715</enddate><creator>JAE KYEONG JEONG</creator><creator>KIM TAIKYU</creator><creator>BAEKEUN YOO</creator><scope>EVB</scope></search><sort><creationdate>20200715</creationdate><title>Thin film transistors and a method for fabricating the same</title><author>JAE KYEONG JEONG ; KIM TAIKYU ; BAEKEUN YOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200085437A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JAE KYEONG JEONG</creatorcontrib><creatorcontrib>KIM TAIKYU</creatorcontrib><creatorcontrib>BAEKEUN YOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JAE KYEONG JEONG</au><au>KIM TAIKYU</au><au>BAEKEUN YOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thin film transistors and a method for fabricating the same</title><date>2020-07-15</date><risdate>2020</risdate><abstract>The present invention is to provide a thin film transistor with increased electrical performance by reducing an effective hole mass of a P-type oxide semiconductor and a method of fabricating the same. According to the present invention, the thin film transistor comprises: a source electrode; a drain electrode; and a channel layer connecting the source electrode and the drain electrode. The channel layer includes a tin-based oxide represented by SnMO, wherein the M includes at least one of a non-metal chalcogen element and a halogen element.
박막 트랜지스터는 소스 전극, 드레인 전극, 및 상기 소스 전극과 상기 드레인 전극을 연결하는 채널층을 포함한다. 상기 채널층은 SnMO로 표현되는 주석계 산화물(tin-based oxide)을 포함하고, 상기 M은 비금속 칼코겐 원소 및 할로겐 원소 중 적어도 하나를 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Thin film transistors and a method for fabricating the same |
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