Thin film transistors and a method for fabricating the same
The present invention is to provide a thin film transistor with increased electrical performance by reducing an effective hole mass of a P-type oxide semiconductor and a method of fabricating the same. According to the present invention, the thin film transistor comprises: a source electrode; a drai...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention is to provide a thin film transistor with increased electrical performance by reducing an effective hole mass of a P-type oxide semiconductor and a method of fabricating the same. According to the present invention, the thin film transistor comprises: a source electrode; a drain electrode; and a channel layer connecting the source electrode and the drain electrode. The channel layer includes a tin-based oxide represented by SnMO, wherein the M includes at least one of a non-metal chalcogen element and a halogen element.
박막 트랜지스터는 소스 전극, 드레인 전극, 및 상기 소스 전극과 상기 드레인 전극을 연결하는 채널층을 포함한다. 상기 채널층은 SnMO로 표현되는 주석계 산화물(tin-based oxide)을 포함하고, 상기 M은 비금속 칼코겐 원소 및 할로겐 원소 중 적어도 하나를 포함한다. |
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