PLASMA CHEMICAL PROCESSING OF WAFER DIES

According to the present invention, a method of processing wafer dies which are partially separated by cut lines formed on a surface of a wafer comprises, for example, the steps of: generating a plasma using a radio frequency (RF) source; and confining the reaction of the plasma by the wafer surface...

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Bibliographische Detailangaben
Hauptverfasser:	EVERTSEN ROGIER, WANG SHAOYING, BECKERS NICOLLE MARIA BERTA JOZEFINA
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	According to the present invention, a method of processing wafer dies which are partially separated by cut lines formed on a surface of a wafer comprises, for example, the steps of: generating a plasma using a radio frequency (RF) source; and confining the reaction of the plasma by the wafer surface in the vicinity of the cut lines to etch the wafer in the vicinity of the cut lines. Advantageously, the wafer can be laser-cut. 웨이퍼의 표면에 형성된 절단선들에 의해 적어도 부분적으로 분리된 웨이퍼 다이들을 처리하는 방법은, 예를 들면 RF 소스를 사용하여, 플라즈마를 생성하는 단계, 및 절단선들의 부근의 웨이퍼를 에칭하기 위해 절단선들의 부근에서 웨이퍼 표면에 의해 플라즈마의 반응을 국한시키는 단계를 포함한다. 이롭게는, 웨이퍼는 레이저-절단될 수 있다.