A Method of Silicon Insulating Film Deposition at Low Temperature

The present invention relates to a method for depositing a silicon insulating film at low temperature, which mixes germanium-containing gas with silicon-containing gas to supply the same during a process of forming the silicon insulating film or firstly supplies the germanium-containing gas before t...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HWANG CHUL JOO, KOO BUN HEI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention relates to a method for depositing a silicon insulating film at low temperature, which mixes germanium-containing gas with silicon-containing gas to supply the same during a process of forming the silicon insulating film or firstly supplies the germanium-containing gas before the silicon-containing gas is supplied. Therefore, the method for depositing a silicon insulating film at low temperature can deposit the silicon insulating film at the low temperature. 본 발명은 실리콘 절연막을 형성하는 공정에서 실리콘 함유 가스에 게르마늄 함유 가스를 혼합하여 공급하거나, 실리콘 함유 가스를 공급하기 전에 게르마늄 함유 가스를 먼저 공급하여 저온에서 실리콘 절연막을 증착할 수 있도록 한 저온 실리콘 절연막 증착 방법에 관한 것이다.