Substrate processing apparatus and method of substrate processing
The present invention relates to a substrate processing apparatus and, more specifically, to a substrate processing apparatus and a substrate processing method which can measure a thin film thickness of a substrate in a process. The substrate processing apparatus comprises: a process chamber (100) w...
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creator | SON KWANG JEONG PARK SANG HO WANG HYUN CHUL LEE CHUL HWANG HYE JU |
description | The present invention relates to a substrate processing apparatus and, more specifically, to a substrate processing apparatus and a substrate processing method which can measure a thin film thickness of a substrate in a process. The substrate processing apparatus comprises: a process chamber (100) which forms a sealed processing space (S) and performs substrate processing of the substrate (1) with a pattern formed on a substrate processing surface; a substrate placing unit (200) which is installed on the process chamber (100) and has a substrate placing surface (210) on which the substrate (1) is placed; a measured unit (300) arranged on the process chamber (100) to form a thin film on the surface thereof in accordance with a substrate processing process; and a thin film thickness measurement unit including a measurement sensor (340) to measure a thin film thickness of the measured unit (300), and a thin film thickness calculation unit to calculate a thin film thickness of the substrate (1) by the thin film thickness of the measured unit (300) measured by the measurement sensor (340).
본 발명은, 기판처리장치에 관한 것으로서, 보다 상세하게는 공정중 기판의 박막두께 측정이 가능한 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명은, 밀폐된 처리공간(S)을 형성하며, 기판처리면에 패턴이 형성되는 기판(1)의 기판처리를 수행하는 공정챔버(100)와; 공정챔버(100)에 설치되며, 기판(1)이 안착되는 기판안착면(210)이 형성되는 기판안착부(200)와; 공정챔버(100)에 구비되어, 기판처리 공정에 따라 표면에 박막이 형성되는 피측정부(300)와; 피측정부(300)의 박막두께를 측정하는 측정센서(340)와, 측정센서(340)를 통해 측정된 피측정부(300)의 박막두께를 통해 기판(1)의 박막두께를 산출하는 박막두께산출부를 포함하는 박막두께측정부를 포함하는 기판처리장치를 개시한다. |
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본 발명은, 기판처리장치에 관한 것으로서, 보다 상세하게는 공정중 기판의 박막두께 측정이 가능한 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명은, 밀폐된 처리공간(S)을 형성하며, 기판처리면에 패턴이 형성되는 기판(1)의 기판처리를 수행하는 공정챔버(100)와; 공정챔버(100)에 설치되며, 기판(1)이 안착되는 기판안착면(210)이 형성되는 기판안착부(200)와; 공정챔버(100)에 구비되어, 기판처리 공정에 따라 표면에 박막이 형성되는 피측정부(300)와; 피측정부(300)의 박막두께를 측정하는 측정센서(340)와, 측정센서(340)를 통해 측정된 피측정부(300)의 박막두께를 통해 기판(1)의 박막두께를 산출하는 박막두께산출부를 포함하는 박막두께측정부를 포함하는 기판처리장치를 개시한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200615&DB=EPODOC&CC=KR&NR=20200068288A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200615&DB=EPODOC&CC=KR&NR=20200068288A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SON KWANG JEONG</creatorcontrib><creatorcontrib>PARK SANG HO</creatorcontrib><creatorcontrib>WANG HYUN CHUL</creatorcontrib><creatorcontrib>LEE CHUL</creatorcontrib><creatorcontrib>HWANG HYE JU</creatorcontrib><title>Substrate processing apparatus and method of substrate processing</title><description>The present invention relates to a substrate processing apparatus and, more specifically, to a substrate processing apparatus and a substrate processing method which can measure a thin film thickness of a substrate in a process. The substrate processing apparatus comprises: a process chamber (100) which forms a sealed processing space (S) and performs substrate processing of the substrate (1) with a pattern formed on a substrate processing surface; a substrate placing unit (200) which is installed on the process chamber (100) and has a substrate placing surface (210) on which the substrate (1) is placed; a measured unit (300) arranged on the process chamber (100) to form a thin film on the surface thereof in accordance with a substrate processing process; and a thin film thickness measurement unit including a measurement sensor (340) to measure a thin film thickness of the measured unit (300), and a thin film thickness calculation unit to calculate a thin film thickness of the substrate (1) by the thin film thickness of the measured unit (300) measured by the measurement sensor (340).
본 발명은, 기판처리장치에 관한 것으로서, 보다 상세하게는 공정중 기판의 박막두께 측정이 가능한 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명은, 밀폐된 처리공간(S)을 형성하며, 기판처리면에 패턴이 형성되는 기판(1)의 기판처리를 수행하는 공정챔버(100)와; 공정챔버(100)에 설치되며, 기판(1)이 안착되는 기판안착면(210)이 형성되는 기판안착부(200)와; 공정챔버(100)에 구비되어, 기판처리 공정에 따라 표면에 박막이 형성되는 피측정부(300)와; 피측정부(300)의 박막두께를 측정하는 측정센서(340)와, 측정센서(340)를 통해 측정된 피측정부(300)의 박막두께를 통해 기판(1)의 박막두께를 산출하는 박막두께산출부를 포함하는 박막두께측정부를 포함하는 기판처리장치를 개시한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAMLk0qLilKLElVKCjKT04tLs7MS1dILChIBIqVFisk5qUo5KaWZOSnKOSnKRRjUczDwJqWmFOcyguluRmU3VxDnD10Uwvy41OLCxKTU_NSS-K9g4wMjAwMDMwsjCwsHI2JUwUALwgzWg</recordid><startdate>20200615</startdate><enddate>20200615</enddate><creator>SON KWANG JEONG</creator><creator>PARK SANG HO</creator><creator>WANG HYUN CHUL</creator><creator>LEE CHUL</creator><creator>HWANG HYE JU</creator><scope>EVB</scope></search><sort><creationdate>20200615</creationdate><title>Substrate processing apparatus and method of substrate processing</title><author>SON KWANG JEONG ; PARK SANG HO ; WANG HYUN CHUL ; LEE CHUL ; HWANG HYE JU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200068288A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SON KWANG JEONG</creatorcontrib><creatorcontrib>PARK SANG HO</creatorcontrib><creatorcontrib>WANG HYUN CHUL</creatorcontrib><creatorcontrib>LEE CHUL</creatorcontrib><creatorcontrib>HWANG HYE JU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SON KWANG JEONG</au><au>PARK SANG HO</au><au>WANG HYUN CHUL</au><au>LEE CHUL</au><au>HWANG HYE JU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate processing apparatus and method of substrate processing</title><date>2020-06-15</date><risdate>2020</risdate><abstract>The present invention relates to a substrate processing apparatus and, more specifically, to a substrate processing apparatus and a substrate processing method which can measure a thin film thickness of a substrate in a process. The substrate processing apparatus comprises: a process chamber (100) which forms a sealed processing space (S) and performs substrate processing of the substrate (1) with a pattern formed on a substrate processing surface; a substrate placing unit (200) which is installed on the process chamber (100) and has a substrate placing surface (210) on which the substrate (1) is placed; a measured unit (300) arranged on the process chamber (100) to form a thin film on the surface thereof in accordance with a substrate processing process; and a thin film thickness measurement unit including a measurement sensor (340) to measure a thin film thickness of the measured unit (300), and a thin film thickness calculation unit to calculate a thin film thickness of the substrate (1) by the thin film thickness of the measured unit (300) measured by the measurement sensor (340).
본 발명은, 기판처리장치에 관한 것으로서, 보다 상세하게는 공정중 기판의 박막두께 측정이 가능한 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명은, 밀폐된 처리공간(S)을 형성하며, 기판처리면에 패턴이 형성되는 기판(1)의 기판처리를 수행하는 공정챔버(100)와; 공정챔버(100)에 설치되며, 기판(1)이 안착되는 기판안착면(210)이 형성되는 기판안착부(200)와; 공정챔버(100)에 구비되어, 기판처리 공정에 따라 표면에 박막이 형성되는 피측정부(300)와; 피측정부(300)의 박막두께를 측정하는 측정센서(340)와, 측정센서(340)를 통해 측정된 피측정부(300)의 박막두께를 통해 기판(1)의 박막두께를 산출하는 박막두께산출부를 포함하는 박막두께측정부를 포함하는 기판처리장치를 개시한다.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Substrate processing apparatus and method of substrate processing |
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