supply modulator and power amplifier having thereof
The modulation device according to one embodiment includes: a first amplifier and a second amplifier receiving and amplifying an envelope signal of an RF signal; and a push-pull stage including an N-type semiconductor (N-MOS) receiving a first gate voltage from the first amplifier and a P-MOS semico...
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creator | CHOI YEONG SEOK HA GUN HEE CHO CHOON SIK CHOI JONG HYUN |
description | The modulation device according to one embodiment includes: a first amplifier and a second amplifier receiving and amplifying an envelope signal of an RF signal; and a push-pull stage including an N-type semiconductor (N-MOS) receiving a first gate voltage from the first amplifier and a P-MOS semiconductor (P-MOS) receiving a second gate voltage from the second amplifier, and supplying a modulation signal obtained based on the envelope signal to a power amplifier amplifying the RF signal.
일 실시예에 따른 변조 장치는 RF 신호의 포락선 신호(envelope)를 수신하여 증폭하는 제1 증폭기 및 제2 증폭기 및 상기 제1 증폭기로부터 제1 게이트 전압을 공급받는 N형 반도체(N-MOS) 및 상기 제2 증폭기로부터 제2 게이트 전압을 공급받는 P형 반도체(P-MOS)를 포함하고, 상기 포락선 신호에 기초하여 획득된 변조 신호를 상기 RF 신호를 증폭하는 전력 증폭기에 공급하는 푸쉬-풀 스테이지(push-pull stage)를 포함할 수 있다. |
format | Patent |
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일 실시예에 따른 변조 장치는 RF 신호의 포락선 신호(envelope)를 수신하여 증폭하는 제1 증폭기 및 제2 증폭기 및 상기 제1 증폭기로부터 제1 게이트 전압을 공급받는 N형 반도체(N-MOS) 및 상기 제2 증폭기로부터 제2 게이트 전압을 공급받는 P형 반도체(P-MOS)를 포함하고, 상기 포락선 신호에 기초하여 획득된 변조 신호를 상기 RF 신호를 증폭하는 전력 증폭기에 공급하는 푸쉬-풀 스테이지(push-pull stage)를 포함할 수 있다.</description><language>eng ; kor</language><subject>AMPLIFIERS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200528&DB=EPODOC&CC=KR&NR=20200059063A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200528&DB=EPODOC&CC=KR&NR=20200059063A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHOI YEONG SEOK</creatorcontrib><creatorcontrib>HA GUN HEE</creatorcontrib><creatorcontrib>CHO CHOON SIK</creatorcontrib><creatorcontrib>CHOI JONG HYUN</creatorcontrib><title>supply modulator and power amplifier having thereof</title><description>The modulation device according to one embodiment includes: a first amplifier and a second amplifier receiving and amplifying an envelope signal of an RF signal; and a push-pull stage including an N-type semiconductor (N-MOS) receiving a first gate voltage from the first amplifier and a P-MOS semiconductor (P-MOS) receiving a second gate voltage from the second amplifier, and supplying a modulation signal obtained based on the envelope signal to a power amplifier amplifying the RF signal.
일 실시예에 따른 변조 장치는 RF 신호의 포락선 신호(envelope)를 수신하여 증폭하는 제1 증폭기 및 제2 증폭기 및 상기 제1 증폭기로부터 제1 게이트 전압을 공급받는 N형 반도체(N-MOS) 및 상기 제2 증폭기로부터 제2 게이트 전압을 공급받는 P형 반도체(P-MOS)를 포함하고, 상기 포락선 신호에 기초하여 획득된 변조 신호를 상기 RF 신호를 증폭하는 전력 증폭기에 공급하는 푸쉬-풀 스테이지(push-pull stage)를 포함할 수 있다.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAuLi0oyKlUyM1PKc1JLMkvUkjMS1EoyC9PBbJyC3Iy0zKBrIzEssy8dIWSjNSi1Pw0HgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBkYGBgamlgZuxoTJwqAOg5LbM</recordid><startdate>20200528</startdate><enddate>20200528</enddate><creator>CHOI YEONG SEOK</creator><creator>HA GUN HEE</creator><creator>CHO CHOON SIK</creator><creator>CHOI JONG HYUN</creator><scope>EVB</scope></search><sort><creationdate>20200528</creationdate><title>supply modulator and power amplifier having thereof</title><author>CHOI YEONG SEOK ; HA GUN HEE ; CHO CHOON SIK ; CHOI JONG HYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200059063A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>CHOI YEONG SEOK</creatorcontrib><creatorcontrib>HA GUN HEE</creatorcontrib><creatorcontrib>CHO CHOON SIK</creatorcontrib><creatorcontrib>CHOI JONG HYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHOI YEONG SEOK</au><au>HA GUN HEE</au><au>CHO CHOON SIK</au><au>CHOI JONG HYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>supply modulator and power amplifier having thereof</title><date>2020-05-28</date><risdate>2020</risdate><abstract>The modulation device according to one embodiment includes: a first amplifier and a second amplifier receiving and amplifying an envelope signal of an RF signal; and a push-pull stage including an N-type semiconductor (N-MOS) receiving a first gate voltage from the first amplifier and a P-MOS semiconductor (P-MOS) receiving a second gate voltage from the second amplifier, and supplying a modulation signal obtained based on the envelope signal to a power amplifier amplifying the RF signal.
일 실시예에 따른 변조 장치는 RF 신호의 포락선 신호(envelope)를 수신하여 증폭하는 제1 증폭기 및 제2 증폭기 및 상기 제1 증폭기로부터 제1 게이트 전압을 공급받는 N형 반도체(N-MOS) 및 상기 제2 증폭기로부터 제2 게이트 전압을 공급받는 P형 반도체(P-MOS)를 포함하고, 상기 포락선 신호에 기초하여 획득된 변조 신호를 상기 RF 신호를 증폭하는 전력 증폭기에 공급하는 푸쉬-풀 스테이지(push-pull stage)를 포함할 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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language | eng ; kor |
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subjects | AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRICITY |
title | supply modulator and power amplifier having thereof |
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