supply modulator and power amplifier having thereof

The modulation device according to one embodiment includes: a first amplifier and a second amplifier receiving and amplifying an envelope signal of an RF signal; and a push-pull stage including an N-type semiconductor (N-MOS) receiving a first gate voltage from the first amplifier and a P-MOS semico...

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Bibliographische Detailangaben
Hauptverfasser: CHOI YEONG SEOK, HA GUN HEE, CHO CHOON SIK, CHOI JONG HYUN
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:The modulation device according to one embodiment includes: a first amplifier and a second amplifier receiving and amplifying an envelope signal of an RF signal; and a push-pull stage including an N-type semiconductor (N-MOS) receiving a first gate voltage from the first amplifier and a P-MOS semiconductor (P-MOS) receiving a second gate voltage from the second amplifier, and supplying a modulation signal obtained based on the envelope signal to a power amplifier amplifying the RF signal. 일 실시예에 따른 변조 장치는 RF 신호의 포락선 신호(envelope)를 수신하여 증폭하는 제1 증폭기 및 제2 증폭기 및 상기 제1 증폭기로부터 제1 게이트 전압을 공급받는 N형 반도체(N-MOS) 및 상기 제2 증폭기로부터 제2 게이트 전압을 공급받는 P형 반도체(P-MOS)를 포함하고, 상기 포락선 신호에 기초하여 획득된 변조 신호를 상기 RF 신호를 증폭하는 전력 증폭기에 공급하는 푸쉬-풀 스테이지(push-pull stage)를 포함할 수 있다.