method for drying substrate photoresist developing method and photolithography method using the same

The present invention provides a substrate drying method, a photoresist development method, and a photolithography method. The drying method comprises a step of providing a drying liquid on a substrate; a step of generating a supercritical fluid by increasing pressure of the drying liquid; and a ste...

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Bibliographische Detailangaben
Hauptverfasser: LEE KUNTACK, KIM YOUNG HOO, LEE HYOSAN, CHO YONG JHIN, CHOI SOO YOUNG, KOH CHAWON, PARK SUNGHYUN, CHA JI HOON
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:The present invention provides a substrate drying method, a photoresist development method, and a photolithography method. The drying method comprises a step of providing a drying liquid on a substrate; a step of generating a supercritical fluid by increasing pressure of the drying liquid; and a step of removing the supercritical fluid to dry the substrate. According to the present invention, collapse defects of photoresist patterns can be minimized or prevented. 본 발명은 기판 건조 방법, 포토레지스트 현상 방법, 및 포토리소그래피 방법을 개시한다. 그의 건조 방법은, 기판 상에 건조 액체를 제공하는 단계와, 상기 건조 액체의 압력을 증가시켜 초임계 유체를 생성하는 단계와, 상기 초임계 유체를 제거하여 상기 기판을 건조하는 단계를 포함한다.