CRUCIBLE FOR USE IN APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTAL
A crucible for a sapphire single crystal growth device of the present invention is a crucible in which raw alumina is introduced and a sapphire single crystal is grown in a vertical direction. As an internal area of an upper portion is greater than an internal area of a lower portion to which a sing...
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| creator | LEE, HUI CHOON MOON SUNG HWAN KIM HYUNG JOONG KIM JUN HWAN JANG GYE WON |
| description | A crucible for a sapphire single crystal growth device of the present invention is a crucible in which raw alumina is introduced and a sapphire single crystal is grown in a vertical direction. As an internal area of an upper portion is greater than an internal area of a lower portion to which a single crystal seed is mounted, an amount of the single crystal seed can be minimized, and a sapphire single crystal growth time can be shortened.
본 발명의 사파이어 단결정 성장장치용 도가니는 알루미나 원료가 투입되어 사파이어 단결정이 수직방향으로 성장되는 도가니로서, 단결정 시드가 장착되는 하부의 내부 면적에 비해 상부의 내부 면적이 크게 형성되어, 단결정 시드의 사용량을 최소화할 수 있고, 사파이어 단결정 성장시간을 단축할 수 있다. |
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본 발명의 사파이어 단결정 성장장치용 도가니는 알루미나 원료가 투입되어 사파이어 단결정이 수직방향으로 성장되는 도가니로서, 단결정 시드가 장착되는 하부의 내부 면적에 비해 상부의 내부 면적이 크게 형성되어, 단결정 시드의 사용량을 최소화할 수 있고, 사파이어 단결정 성장시간을 단축할 수 있다.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB0Dgp19nTycVVw8w9SCA12VfD0U3AMCHAMcgwJDQYLugf5h3v6uSsEA4U9PINcFYKBPKAG56DI4BBHHx4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEu8dZGRgZGBgYGJmYmbhaEycKgB7wivN</recordid><startdate>20200507</startdate><enddate>20200507</enddate><creator>LEE, HUI CHOON</creator><creator>MOON SUNG HWAN</creator><creator>KIM HYUNG JOONG</creator><creator>KIM JUN HWAN</creator><creator>JANG GYE WON</creator><scope>EVB</scope></search><sort><creationdate>20200507</creationdate><title>CRUCIBLE FOR USE IN APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTAL</title><author>LEE, HUI CHOON ; MOON SUNG HWAN ; KIM HYUNG JOONG ; KIM JUN HWAN ; JANG GYE WON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20200046468A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, HUI CHOON</creatorcontrib><creatorcontrib>MOON SUNG HWAN</creatorcontrib><creatorcontrib>KIM HYUNG JOONG</creatorcontrib><creatorcontrib>KIM JUN HWAN</creatorcontrib><creatorcontrib>JANG GYE WON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, HUI CHOON</au><au>MOON SUNG HWAN</au><au>KIM HYUNG JOONG</au><au>KIM JUN HWAN</au><au>JANG GYE WON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CRUCIBLE FOR USE IN APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTAL</title><date>2020-05-07</date><risdate>2020</risdate><abstract>A crucible for a sapphire single crystal growth device of the present invention is a crucible in which raw alumina is introduced and a sapphire single crystal is grown in a vertical direction. As an internal area of an upper portion is greater than an internal area of a lower portion to which a single crystal seed is mounted, an amount of the single crystal seed can be minimized, and a sapphire single crystal growth time can be shortened.
본 발명의 사파이어 단결정 성장장치용 도가니는 알루미나 원료가 투입되어 사파이어 단결정이 수직방향으로 성장되는 도가니로서, 단결정 시드가 장착되는 하부의 내부 면적에 비해 상부의 내부 면적이 크게 형성되어, 단결정 시드의 사용량을 최소화할 수 있고, 사파이어 단결정 성장시간을 단축할 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | CRUCIBLE FOR USE IN APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTAL |
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