CRUCIBLE FOR USE IN APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTAL

A crucible for a sapphire single crystal growth device of the present invention is a crucible in which raw alumina is introduced and a sapphire single crystal is grown in a vertical direction. As an internal area of an upper portion is greater than an internal area of a lower portion to which a sing...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, HUI CHOON, MOON SUNG HWAN, KIM HYUNG JOONG, KIM JUN HWAN, JANG GYE WON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A crucible for a sapphire single crystal growth device of the present invention is a crucible in which raw alumina is introduced and a sapphire single crystal is grown in a vertical direction. As an internal area of an upper portion is greater than an internal area of a lower portion to which a single crystal seed is mounted, an amount of the single crystal seed can be minimized, and a sapphire single crystal growth time can be shortened. 본 발명의 사파이어 단결정 성장장치용 도가니는 알루미나 원료가 투입되어 사파이어 단결정이 수직방향으로 성장되는 도가니로서, 단결정 시드가 장착되는 하부의 내부 면적에 비해 상부의 내부 면적이 크게 형성되어, 단결정 시드의 사용량을 최소화할 수 있고, 사파이어 단결정 성장시간을 단축할 수 있다.