Sensors contained CNT semiconductor layer
The present invention relates to a sensor with a carbon nanotube semiconductor layer and, more specifically, to a layer containing a conjugated polymer binder made of any one organic material from single-walled carbon nanotubes wrapped with fluorene or thiophene polymers, and organic materials of an...
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Format: | Patent |
Sprache: | eng ; kor |
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Zusammenfassung: | The present invention relates to a sensor with a carbon nanotube semiconductor layer and, more specifically, to a layer containing a conjugated polymer binder made of any one organic material from single-walled carbon nanotubes wrapped with fluorene or thiophene polymers, and organic materials of any of polyfluorene, polythiophene, diketopyrrolopyrrole (DPP), benzodipyrrolidone (BDP), benzopyrazine, and naphthalene diimide (NDI), and provides the sensor detecting changes in electrical properties when exposed to chemicals by allowing the fluorene or thiophene polymer to utilize a carbon nanotube semiconductor layer selectively wrapping a single-wall carbon nanotube having semiconductor properties as an active layer.
본 발명은 탄소나노튜브 반도체층이 포함된 센서에 관한 것으로 보다 상세하게는 플루오렌 또는 티오펜 고분자가 랩핑된 단일벽 탄소나노튜브와 폴리플루오렌, 폴리티오펜, DPP(diketopyrrolopyrrole)계열, BDP(benzodipyrrolidone)계열, Benzopyrazine계열 및 NDI(naphthalene diimide)계열 중 어느 하나의 유기물질로 된 공액고분자 바인더가 포함된 층으로, 상기 플루오렌 또는 티오펜 고분자는 반도체성질을 갖는 단일벽 탄소나노튜브만을 선택적으로 랩핑한 탄소나노튜브 반도체층을 활성층으로 활용하여 화학물질에 노출시 전기적 특성 변화를 감지할 수 있는 탄소나노튜브 반도체층이 포함된 센서를 제공한다. |
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