METHOD OF MANUFACTURING A BRAGG STACK REFLECTION POROUS SILICON FILM AND EXPLOSIVES CHEMICAL SENSOR BASED ON THE BRAGG STACK REFLECTION POROUS SILICON FILM
The present invention relates to a distributed Bragg reflection porous silicon film and to a chemical sensor for detecting explosives based on a distributed Bragg reflection porous silicon film. More particularly, a distributed Bragg reflection porous silicon film and a chemical sensor for detecting...
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Zusammenfassung: | The present invention relates to a distributed Bragg reflection porous silicon film and to a chemical sensor for detecting explosives based on a distributed Bragg reflection porous silicon film. More particularly, a distributed Bragg reflection porous silicon film and a chemical sensor for detecting explosives based on a distributed Bragg reflection porous silicon film using the same are formed in which the sensitivity of explosive detection is improved by using the optical characteristics of distributed Bragg reflection by means of the principle of photoluminescence quenching of a specific light emission wavelength region of polysilole while an electron in a conduction band of the polysilole, which is a photoluminescent polymer for explosive detection, moves to the lowest unoccupied molecular orbital of explosives. As a result, nitro aromatics, nitro amines, and nitrate ester compounds, which are explosives that were difficult to detect in the related art, can be detected. A manufacturing method of the distributed Bragg reflection porous silicon film of the present invention to achieve the above objective may include: (a) a step of forming distributed Bragg reflection porous silicon having reflection wavelength characteristics to selectively reflect a specific wavelength region on the surface of a silicon wafer by performing primary etching on the silicon wafer; (b) a step of forming a distributed Bragg reflection porous silicon film by separating the formed distributed Bragg reflection porous silicon from the silicon wafer by secondary etching; and (c) a step of causing a photoluminescent polymer solution to infiltrate into the distributed Bragg reflection porous silicon film.
본 발명은 분포 브래그 반사 다공질 실리콘 필름 및 이를 이용한 분포 브래그 반사 다공질 실리콘 필름 기반 폭발물 탐지용 화학센서에 관한 것으로, 보다 상세하게는 폭발물을 탐지하는 광 발광 고분자인(photoluminescent polymer) 폴리실올의 전도대(conduction band)에 있는 전자(electron)가 폭발물의 최저공궤도(Lowest Unoccupied Molecular Orbital)로 이동하면서 폴리실올의 특정 발광(light emission) 파장(wavelength)영역의 소광(photoluminescence quenching) 현상의 원리를 이용하여 폭발물 탐지의 민감도를 분포 브래그 반사의 광학적인 특징을 사용하여 향상시킨 분포 브래그 반사 다공질 실리콘 필름 및 이를 이용한 분포 브래그 반사 다공질 실리콘 필름 기반 폭발물 탐지용 화학센서를 형성하며, 이는 종래 측정하기 어려웠던 폭발물로 니트로 방향족(nitro aromatics), 니트로 아민계(nitro amines) 그리고 나이트레이트 에스테르계(nitrate ester) 화합물의 탐지가 가능하다. |
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