LAYER DEPOSITION METHOD AND LAYER DEPOSITION APPARATUS

According to a thin film deposition method, a substrate is loaded into a process chamber. The filling volume of at least one variable capacity filling tank is adjusted. The variable capacity filling tank is filled with gas. The filled gas is introduced into the process chamber. 박막 증착 방법에 있어서, 공정 챔버...

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Bibliographische Detailangaben
Hauptverfasser:	LEE SUN SOO, JI BYOUNG HOON, BAE JONG YONG, MAENG SEO YOUNG, HAN DONG HOON, LEE DONG HWAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	According to a thin film deposition method, a substrate is loaded into a process chamber. The filling volume of at least one variable capacity filling tank is adjusted. The variable capacity filling tank is filled with gas. The filled gas is introduced into the process chamber. 박막 증착 방법에 있어서, 공정 챔버 내에 기판을 로딩한다. 적어도 하나의 가변 용량형 충전 탱크의 충전 체적을 조정한다. 가스를 상기 가변 용량형 충전 탱크에 충전시킨다. 상기 충전된 가스를 상기 공정 챔버 내에 도입한다.