COMPOUND AND HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS

The present invention relates to: a compound represented by chemical formula 1; a hard mask composition comprising the compound; a hard mask layer comprising a cured product of the hard mask composition; and a pattern forming method using the hard mask composition. In the chemical formula 1, definit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MUN, SOO HYOUN, YOON, BYE RI, LIM, SANG HAK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY ELECTROGRAPHY HETEROCYCLIC COMPOUNDS HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC CHEMISTRY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to: a compound represented by chemical formula 1; a hard mask composition comprising the compound; a hard mask layer comprising a cured product of the hard mask composition; and a pattern forming method using the hard mask composition. In the chemical formula 1, definitions of Z, L, A, and R^1 to R^12 are as described in the specification. The present invention can secure excellent etching resistance and planarization characteristics of the hard mask layer. 하기 화학식 1로 표현되는 화합물, 상기 화합물을 포함하는 하드마스크 조성물, 상기 하드마스크 조성물의 경화물을 포함하는 하드마스크 층 및 상기 하드마스크 조성물을 사용하는 패턴형성방법에 관한 것이다. [화학식 1]상기 화학식 1에서, Z, L, A 및 R내지 R의 정의는 명세서에 기재된 바와 같다.