ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND ETCHING PROCESS OF SILICON NITRIDE LAYER USING THE SAME

The present invention relates to a composition for etching a silicon nitride film, which comprises: inorganic acids or salts thereof; water; a compound represented by chemical formula 1; a compound represented by chemical formula 2; and at least one of reaction products of the compound of represente...

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Bibliographische Detailangaben
Hauptverfasser:	KIM GO UN, KOH SANG RAN, CHOI JUNG MIN, CHO YOUN JIN, HAN KWEN WOO, HWANG KI WOOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a composition for etching a silicon nitride film, which comprises: inorganic acids or salts thereof; water; a compound represented by chemical formula 1; a compound represented by chemical formula 2; and at least one of reaction products of the compound of represented by the chemical formula 1 or the compound represented by the chemical formula 2, and to a silicon nitride film etching method using the same. 무기산 또는 그의 염; 물; 및 화학식 1의 화합물; 화학식 2의 화합물; 및 화학식 1의 화합물 또는 화학식 2의 화합물의 반응 생성물 중 1종 이상을 포함하는 실리콘 질화막 식각용 조성물 및 이를 이용한 실리콘 질화막 식각 방법이 제공된다.