A COMPOSITION FOR ETCHING NITRIDE LAYER FOR SINGLE WAFER PROCESSING AND ETCHING METHOD USING THE SAME

The present invention relates to a single-type silicon nitride film etching composition, which is excellent in the etching speed for a silicon nitride film and to an etching method using the same. The composition comprises: phosphoric acid (H_3PO_4); fluorinated silicic acid (H_2 SiF_6); and water,...

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Bibliographische Detailangaben
Hauptverfasser:	BAE JEONGHYUN, LEE YANGHO, LEE SEUNGHOON, MO SUNGWON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a single-type silicon nitride film etching composition, which is excellent in the etching speed for a silicon nitride film and to an etching method using the same. The composition comprises: phosphoric acid (H_3PO_4); fluorinated silicic acid (H_2 SiF_6); and water, wherein 0.05 wt% or more of the fluorinated silicic acid is included. 본 발명은 매엽식 실리콘 질화막 식각용 조성물 및 이를 이용한 식각 방법에 관한 것이다. 구체예에서 상기 조성물은 인산(HPO); 플루오린화 규산(HSiF); 및 물;을 포함하며, 상기 플루오린화 규산은 0.05 중량% 이상 포함된다.