GUIDED INSPECTION OF A SEMICONDUCTOR WAFER BASED ON SYSTEMATIC DEFECTS

Candidate defects can be identified in a semiconductor wafer. It can be determined whether the candidate defects in the semiconductor wafer correspond to systematic defects or random defects. In response of determination that the candidate defects in the semiconductor wafer correspond to the systema...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SOFER YOTAM, SHABTAY SAAR, COHEN BOAZ, BUCHMAN ELI
Format: Patent
Sprache:eng ; kor
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Candidate defects can be identified in a semiconductor wafer. It can be determined whether the candidate defects in the semiconductor wafer correspond to systematic defects or random defects. In response of determination that the candidate defects in the semiconductor wafer correspond to the systematic defects, the candidate defects in the semiconductor wafer can be provided to a defect examination tool for examination by the defect examination tool. 반도체 웨이퍼에서 후보 결함이 식별될 수 있다. 반도체 웨이퍼에서의 후보 결함이 계통적 결함에 대응하는지 또는 랜덤 결함에 대응하는지에 관한 결정이 이루어질 수 있다. 반도체 웨이퍼에서의 후보 결함이 계통적 결함에 대응한다고 결정하는 것에 대한 응답으로, 반도체 웨이퍼에서의 후보 결함이 결함 검토 도구에 의한 검토를 위해 결함 검토 도구에 제공될 수 있다.