RADIO FREQUENCY SWITCH

A high frequency switch with the improved cutoff characteristics comprises: a substrate; one pair of ground portions provided on the substrate; a central conductor provided between the pair of ground portions; and a photoelectric semiconductor element provided on the central conductor. The photoelec...

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Bibliographische Detailangaben
Hauptverfasser:	EVTYUSHKIN GENNADIY ALEKSANDROVICH, LEE JONG IN, YANG DONG IL, LUKYANOV ANTON SERGEEVICH, NIKISHOV ARTEM YURIEVICH, MAKURIN MIKHAIL NIKOLAEVICH, KIM KI SOO, SHEPELEVA ELENA ALEKSANDROVNA
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A high frequency switch with the improved cutoff characteristics comprises: a substrate; one pair of ground portions provided on the substrate; a central conductor provided between the pair of ground portions; and a photoelectric semiconductor element provided on the central conductor. The photoelectric semiconductor element is extended between the pair of ground portions and the central conductor. 고주파 스위치는 기판, 기판 상에 제공되는 한 쌍의 접지 부분들, 한 쌍의 접지 부분들 사이에 제공되는 중앙 전도체, 및 중앙 전도체 상에 제공되는 광전 반도체 요소를 포함하되, 광전 반도체 요소는 한 쌍의 접지 부분들과 중앙 전도체 사이로 연장한다.