APPARATUS AND METHOD FOR DRYING WAFER

Disclosed is a semiconductor light emitting device in contact with an ejection needle, comprising: a plurality of light emitting portions formed on a substrate, wherein the light emitting portions are composed of a first light emitting portion and a second light emitting portion, each including a fi...

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1. Verfasser: JIN GEUN MO
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:Disclosed is a semiconductor light emitting device in contact with an ejection needle, comprising: a plurality of light emitting portions formed on a substrate, wherein the light emitting portions are composed of a first light emitting portion and a second light emitting portion, each including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a plurality of semiconductor layers interposed between the first semiconductor layer and second semiconductor layer and having an active layer generating light by recombination of electrons and holes; a connecting portion electrically connecting the first light emitting portion and the second light emitting portion; an insulating layer provided on the first light emitting portion and the second light emitting portion; a first electrode portion electrically connected to the second semiconductor layer of the first light emitting portion through the insulating layer; and a second electrode portion electrically connected to the first semiconductor layer of the second light emitting portion through the insulating layer. The first electrode portion includes: a first upper electrode formed on the insulating layer; and a first electrical connection electrically connecting the upper electrode and the second semiconductor layer of the first light emitting portion through the insulating layer. The second electrode portion includes: a second upper electrode formed on the insulating layer; and a second electrical connection electrically connecting the second upper electrode and the first semiconductor layer of the second light emitting portion through the insulating layer. The semiconductor light emitting device further comprises: a protrusion portion in which a part of one light emitting portion is exposed to the other light emitting portion of the light emitting portions in a plan view; and a groove portion in which a part of the other light emitting portion corresponds to the protrusion portion in the plan view, wherein on the protrusion portion, formed is a contact area in contact with the ejection needle. 본 개시는 이젝션 니들과 접촉하는 반도체 발광소자에 있어서, 기판 위에 형성되는 복수의 발광부;로서, 각각 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 및 제1 반도체층과 제2 반도체층의 사이에 개재되며 전자와 정공의 재결합에 의해 빛을 생성하는 활성층을 가지는 복수의 반도체층을 포함하는 제1 발광부 및 제2 발광부; 제1 발광부와 제2 발광부를 전기적으로 연결하는 연결부; 제1 발광부와 제2 발광부 위에 구비되는 절연층; 절연층을 관통하여 제1 발광부의 제2 반도체층과 전기적으로 연결하는 제1 전극부; 그리고 절연