CMP CMP SLURRY COMPOSITION

The present invention relates to a slurry composition for CMP containing cerium oxide. The slurry composition for CMP comprises tertiary particles including primary particles and secondary particles, wherein the average particle diameter of the primary particles and secondary particles : the average...

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Bibliographische Detailangaben
Hauptverfasser:	CHO HYUN HEE, RYU HYE RIM, SEO KANG KUK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES CHEMISTRY DYES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SKI WAXES
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Beschreibung
Zusammenfassung:	The present invention relates to a slurry composition for CMP containing cerium oxide. The slurry composition for CMP comprises tertiary particles including primary particles and secondary particles, wherein the average particle diameter of the primary particles and secondary particles : the average particle diameter of the tertiary particles is 1 : 3 to 1 : 500, the porosity of the tertiary particles is 1 to 40%, and the tertiary particles are formed by self-assembly of the primary particles, the secondary particles, or both of the same. 본 발명은 산화 세륨을 포함하는 CMP용 슬러리 조성물에 관한 것으로서, 1차 입자 및 2차 입자를 포함하는 3차 입자를 포함하고, 상기 1차 입자 및 2차 입자의 평균 입경 : 3차 입자의 평균 입경은, 1 : 3 내지 1 : 500 이고, 상기 3차 입자의 기공률은 1 % 내지 40 % 이고, 상기 3차 입자는 1차 입자, 2차 입자 또는 이 둘 모두가 자가 조립하여 형성되는 것을 포함한다.