METHOD FOR TREATING SUBSTRATE AND RINSING LIQUID
The present invention relates to a method for treating a substrate comprising a rinsing process of rinsing a surface of a substrate with a rinsing liquid, wherein a pattern having an aspect ratio of 10 or more is formed on the surface of the substrate. The rinsing liquid comprises an organic solvent...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a method for treating a substrate comprising a rinsing process of rinsing a surface of a substrate with a rinsing liquid, wherein a pattern having an aspect ratio of 10 or more is formed on the surface of the substrate. The rinsing liquid comprises an organic solvent (S1) whose vapor pressure is 25 mmHg or less at 20°C. Also, the present invention relates to the rinsing liquid for rinsing the surface of the substrate, wherein the pattern having an aspect ratio of 10 or more is formed on the surface of the substrate. The rinsing liquid comprises the organic solvent (S1) whose vapor pressure is 25 mmHg or less at 20°C. According to the present invention, pattern collapse can be suppressed in the substrate with a pattern having a high aspect ratio.
애스펙트비가 10 이상인 패턴이 표면에 형성된 기판의 상기 표면을, 린스액으로 린스하는 린스 공정을 포함하는, 기판의 처리 방법으로서, 상기 린스액은, 20 ℃ 에 있어서의 증기압이 25 mmHg 이하인 유기 용매 (S1) 을 포함하는, 기판의 처리 방법. 또, 애스펙트비가 10 이상인 패턴이 표면에 형성된 기판의 상기 표면을 린스하기 위한 린스액으로서, 20 ℃ 에 있어서의 증기압이 25 mmHg 이하인 유기 용매 (S1) 을 포함하는, 린스액. |
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