Etching composition for silicon nitride layer and etching process using the same

The present invention relates to a silicon nitride film etching composition, which comprises: a phosphoric acid compound; water; and at least one of a predetermined silane compound and a reaction product thereof, and to an etching method using the same. When a silicon nitride film is etched using th...

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Bibliographische Detailangaben
Hauptverfasser:	JANG JUN YOUNG, KOH SANG RAN, CHOI JUNG MIN, CHO YOUN JIN, HAN KWEN WOO, HWANG KI WOOK, YOON YONG WOON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a silicon nitride film etching composition, which comprises: a phosphoric acid compound; water; and at least one of a predetermined silane compound and a reaction product thereof, and to an etching method using the same. When a silicon nitride film is etched using the silicon nitride film etching composition, the etching selectivity is improved. 인산화합물; 물; 및 소정의 실란계 화합물 및 그 반응 생성물 중 1종 이상;을 포함하는 실리콘 질화막 식각용 조성물 및 이를 이용한 식각 방법이 개시된다.