Method of fabricating tin sulfide thin film

The present invention provides a method for forming a tin sulfide thin film which comprises: a first step of forming a tin disulfide seed layer on a base film at a relatively low temperature; and a second step of forming a tin disulfide main layer on the tin disulfide seed layer at a relatively high...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM JIN SANG, BAEK SEUNG HYUB, CHOI JI WON, KANG CHONG YUN, KIM SEONG KEUN, SONG HYUN CHEOL, KIM SANG TAE, PYEON JUNG JOON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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