Method of fabricating tin sulfide thin film
The present invention provides a method for forming a tin sulfide thin film which comprises: a first step of forming a tin disulfide seed layer on a base film at a relatively low temperature; and a second step of forming a tin disulfide main layer on the tin disulfide seed layer at a relatively high...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention provides a method for forming a tin sulfide thin film which comprises: a first step of forming a tin disulfide seed layer on a base film at a relatively low temperature; and a second step of forming a tin disulfide main layer on the tin disulfide seed layer at a relatively high temperature. According to the present invention, a method for forming the tin sulfide thin film, which is a two-dimensional layered structure material, with a continuous and uniform thickness in a large size can be realized.
본 발명은 기저막 상에 상대적으로 저온에서 이황화주석 시드층을 형성하는 제 1 단계 및 상기 이황화주석 시드층 상에 상대적으로 고온에서 이황화주석 메인층을 형성하는 제 2 단계를 포함하는, 황화주석 박막의 형성 방법을 제공한다. |
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