GaAs GaAs Layered GaAs manufacturing method thereof and exfoliated GaAs nanosheet therefrom

The present invention relates to a layered GaAs, a manufacturing method thereof and a GaAs nanosheet exfoliated therefrom and, more specifically, to a layered GaAs having a two-dimensional crystalline structure unlike traditional bulk GaAs, having excellent exfoliation properties, being easily exfol...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI SANG JIN, SHIM WOO YOUNG, HYESOO KIM
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a layered GaAs, a manufacturing method thereof and a GaAs nanosheet exfoliated therefrom and, more specifically, to a layered GaAs having a two-dimensional crystalline structure unlike traditional bulk GaAs, having excellent exfoliation properties, being easily exfoliated into a nanosheet form and having a structure where charges can be moved in an in-plane direction, thereby having excellent electrical properties. 본 발명은 층상형 GaAs, 이의 제조 방법 및 이로부터 박리된 GaAs 나노시트에 관한 것이며, 더욱 상세하게는 종래의 벌크형 GaAs와 달리 2차원 결정 구조를 갖고, 박리성이 우수하여 나노시트의 형태로 박리하기 용이하며, 면상(in-plane) 방향으로 전하 이동이 수월한 구조를 가짐으로써 우수한 전기적 특성을 갖는 층상형 GaAs에 관한 것이다.