Equipment and Method for Doped Coating Using Filtered Cathodic Vacuum Arc

Disclosed is equipment for coating a doped thin film using a magnetic field filtered arc source, which comprises: a coating chamber provided in a deposition space; a magnetic field filtered arc source unit provided at one side of the coating chamber, and configured to supply a carbon ion to the insi...

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Bibliographische Detailangaben
Hauptverfasser:	JU HYEON CHOI, HAN MYUNG SOO, LEE WEE SAM, IN JUNG WHAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Disclosed is equipment for coating a doped thin film using a magnetic field filtered arc source, which comprises: a coating chamber provided in a deposition space; a magnetic field filtered arc source unit provided at one side of the coating chamber, and configured to supply a carbon ion to the inside of the coating chamber; an ion beam sputter unit provided at the other side of the coating chamber, and configured to supply a doping atom to the inside of the coating chamber independent of the carbon ion; and a holder provided in the coating chamber, wherein an object to be coated is arranged for the carbon ion and the doping atom to be deposited thereon. 개시되는 자장여과 아크 소스를 이용하여 도핑된 박막을 코팅하는 장치는, 증착 공간으로 제공되는 코팅 챔버; 상기 코팅 챔버의 일 측에 구비되며, 상기 코팅 챔버 내부로 카본 이온을 공급하는 자장 여과 아크 소스 유닛; 상기 코팅 챔버의 타 측에 구비되며, 상기 코팅 챔버 내부로 상기 카본 이온과 독립적으로 도핑 원자를 공급하는 이온빔 스퍼터 유닛; 및 상기 코팅 챔버의 내부에 구비되며, 상기 카본 이온 및 상기 도핑 원자가 증착되는 피코팅체가 배치되는 홀더;를 포함한다.