DEPOSITION APPARATUS AND METHOD

The present invention provides a deposition apparatus which can prevent growth-type foreign matters from occurring in a film deposition process, and a deposition method applied thereto. According to the present invention, the deposition apparatus comprises: a chamber portion disposed on an upper sid...

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Bibliographische Detailangaben
Hauptverfasser:	SUL BONG HO, NOH JAE UNG, SHIM JIN SEOB
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides a deposition apparatus which can prevent growth-type foreign matters from occurring in a film deposition process, and a deposition method applied thereto. According to the present invention, the deposition apparatus comprises: a chamber portion disposed on an upper side of a support portion on which a treatment object is seated, and in which a treatment hole is formed on one surface facing the support portion, and provided with a window on an upper end of the treatment hole; a laser portion for irradiating a laser to the treatment object through the treatment hole; a source supply portion connected to a lower portion of the treatment hole; a purge gas supply portion connected to an upper portion of the treatment hole; a curtain gas supply portion formed to inject curtain gas to the outside of a treatment space formed on a lower side of the treatment hole; and a heater portion installed on at least one side of the purge gas supply portion and the curtain gas supply portion. 본 발명은, 처리물이 안착되는 지지부의 상측에 배치되고, 지지부를 마주보는 일면에 처리홀이 형성되며, 처리홀의 상단에 윈도우가 구비되는 챔버부, 처리홀을 통하여 처리물에 레이저를 조사하는 레이저부, 처리홀의 하부에 연결되는 소스 공급부, 처리홀의 상부에 연결되는 퍼지 가스 공급부, 처리홀의 하측에 형성되는 처리공간의 외측에 커튼 가스를 분사할 수 있도록 형성되는 커튼 가스 공급부, 및 퍼지 가스 공급부와 커튼 가스 공급부 중 적어도 하나의 일측에 설치되는 히터부를 포함하는 증착 장치로서, 막 증착 공정에서 성장형 이물이 발생하는 것을 방지할 수 있는 증착 장치 및 이에 적용되는 증착 방법이 제시된다.