Gas storage cylinder Deposition system and Method of manufacturing semiconductor device
A gas storage cylinder, a deposition system, and a method of manufacturing a semiconductor device are provided. According to the present invention, the method of manufacturing a semiconductor device includes the following processes: mounting a gas cylinder in which monochlorosilane is stored in a ga...
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| creator | PARK KEUM SEOK KONG BYUNG KOO KIM MIJEONG PARK PANKWI HAN YEONOCK CHO YOUNJOUNG JANG CHANGEUN LEE JIN WOOK YOO JEONGHO CHUNG WONWOONG |
| description | A gas storage cylinder, a deposition system, and a method of manufacturing a semiconductor device are provided. According to the present invention, the method of manufacturing a semiconductor device includes the following processes: mounting a gas cylinder in which monochlorosilane is stored in a gas supply unit; and supplying the monochlorosilane into a process chamber to form a silicon-containing film. The gas cylinder may contain manganese. An objective of the present invention is to provide a gas storage cylinder which can store source gas stably.
가스 저장 용기, 증착 시스템, 및 반도체 소자 제조 방법이 제공된다. 본 발명에 따르면, 반도체 소자 제조 방법은 모노클로로실란이 저장된 가스 용기를 가스 공급 유닛 내에 장착하는 것; 및 상기 모노클로로실란을 공정 챔버 내에 공급하여, 실리콘 함유막을 형성하는 것을 포함할 수 있다. 상기 가스 용기는 망간을 포함할 수 있다. |
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가스 저장 용기, 증착 시스템, 및 반도체 소자 제조 방법이 제공된다. 본 발명에 따르면, 반도체 소자 제조 방법은 모노클로로실란이 저장된 가스 용기를 가스 공급 유닛 내에 장착하는 것; 및 상기 모노클로로실란을 공정 챔버 내에 공급하여, 실리콘 함유막을 형성하는 것을 포함할 수 있다. 상기 가스 용기는 망간을 포함할 수 있다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191016&DB=EPODOC&CC=KR&NR=20190117053A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191016&DB=EPODOC&CC=KR&NR=20190117053A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK KEUM SEOK</creatorcontrib><creatorcontrib>KONG BYUNG KOO</creatorcontrib><creatorcontrib>KIM MIJEONG</creatorcontrib><creatorcontrib>PARK PANKWI</creatorcontrib><creatorcontrib>HAN YEONOCK</creatorcontrib><creatorcontrib>CHO YOUNJOUNG</creatorcontrib><creatorcontrib>JANG CHANGEUN</creatorcontrib><creatorcontrib>LEE JIN WOOK</creatorcontrib><creatorcontrib>YOO JEONGHO</creatorcontrib><creatorcontrib>CHUNG WONWOONG</creatorcontrib><title>Gas storage cylinder Deposition system and Method of manufacturing semiconductor device</title><description>A gas storage cylinder, a deposition system, and a method of manufacturing a semiconductor device are provided. According to the present invention, the method of manufacturing a semiconductor device includes the following processes: mounting a gas cylinder in which monochlorosilane is stored in a gas supply unit; and supplying the monochlorosilane into a process chamber to form a silicon-containing film. The gas cylinder may contain manganese. An objective of the present invention is to provide a gas storage cylinder which can store source gas stably.
가스 저장 용기, 증착 시스템, 및 반도체 소자 제조 방법이 제공된다. 본 발명에 따르면, 반도체 소자 제조 방법은 모노클로로실란이 저장된 가스 용기를 가스 공급 유닛 내에 장착하는 것; 및 상기 모노클로로실란을 공정 챔버 내에 공급하여, 실리콘 함유막을 형성하는 것을 포함할 수 있다. 상기 가스 용기는 망간을 포함할 수 있다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzL8KwjAQgPEuDqK-w4GzkFhEHMW_IC4iOJYjudRAcym5ROjb28EHcPqWj9-0el1QQHJM2BKYofNsKcGR-ig--8ggg2QKgGzhTvkdLUQHAbk4NLkkzy0IBW8i22JGByx9vKF5NXHYCS1-nVXL8-l5uK5GuSHp0RBTbm6PtdI7pfVWbep9_d_1BX9eO00</recordid><startdate>20191016</startdate><enddate>20191016</enddate><creator>PARK KEUM SEOK</creator><creator>KONG BYUNG KOO</creator><creator>KIM MIJEONG</creator><creator>PARK PANKWI</creator><creator>HAN YEONOCK</creator><creator>CHO YOUNJOUNG</creator><creator>JANG CHANGEUN</creator><creator>LEE JIN WOOK</creator><creator>YOO JEONGHO</creator><creator>CHUNG WONWOONG</creator><scope>EVB</scope></search><sort><creationdate>20191016</creationdate><title>Gas storage cylinder Deposition system and Method of manufacturing semiconductor device</title><author>PARK KEUM SEOK ; KONG BYUNG KOO ; KIM MIJEONG ; PARK PANKWI ; HAN YEONOCK ; CHO YOUNJOUNG ; JANG CHANGEUN ; LEE JIN WOOK ; YOO JEONGHO ; CHUNG WONWOONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20190117053A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK KEUM SEOK</creatorcontrib><creatorcontrib>KONG BYUNG KOO</creatorcontrib><creatorcontrib>KIM MIJEONG</creatorcontrib><creatorcontrib>PARK PANKWI</creatorcontrib><creatorcontrib>HAN YEONOCK</creatorcontrib><creatorcontrib>CHO YOUNJOUNG</creatorcontrib><creatorcontrib>JANG CHANGEUN</creatorcontrib><creatorcontrib>LEE JIN WOOK</creatorcontrib><creatorcontrib>YOO JEONGHO</creatorcontrib><creatorcontrib>CHUNG WONWOONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK KEUM SEOK</au><au>KONG BYUNG KOO</au><au>KIM MIJEONG</au><au>PARK PANKWI</au><au>HAN YEONOCK</au><au>CHO YOUNJOUNG</au><au>JANG CHANGEUN</au><au>LEE JIN WOOK</au><au>YOO JEONGHO</au><au>CHUNG WONWOONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Gas storage cylinder Deposition system and Method of manufacturing semiconductor device</title><date>2019-10-16</date><risdate>2019</risdate><abstract>A gas storage cylinder, a deposition system, and a method of manufacturing a semiconductor device are provided. According to the present invention, the method of manufacturing a semiconductor device includes the following processes: mounting a gas cylinder in which monochlorosilane is stored in a gas supply unit; and supplying the monochlorosilane into a process chamber to form a silicon-containing film. The gas cylinder may contain manganese. An objective of the present invention is to provide a gas storage cylinder which can store source gas stably.
가스 저장 용기, 증착 시스템, 및 반도체 소자 제조 방법이 제공된다. 본 발명에 따르면, 반도체 소자 제조 방법은 모노클로로실란이 저장된 가스 용기를 가스 공급 유닛 내에 장착하는 것; 및 상기 모노클로로실란을 공정 챔버 내에 공급하여, 실리콘 함유막을 형성하는 것을 포함할 수 있다. 상기 가스 용기는 망간을 포함할 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Gas storage cylinder Deposition system and Method of manufacturing semiconductor device |
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