Gas sensor and method for manufacturing the same
The present invention relates to a gas sensor and a manufacturing method thereof. More particularly, the present invention may provide a gas sensor operating at room temperature in a relatively simple process, which comprises: a metal oxide layer formed of an N-type metal oxide doped with Nb on a su...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention relates to a gas sensor and a manufacturing method thereof. More particularly, the present invention may provide a gas sensor operating at room temperature in a relatively simple process, which comprises: a metal oxide layer formed of an N-type metal oxide doped with Nb on a substrate; and a polymer layer provided with a P-type conductive polymer to form a heterojunction structure with the metal oxide layer. The Nb doping amount of the metal oxide layer is 3 to 4.5 wt% based on the total weight of the Nb-doped N-type metal oxide.
본 발명은 가스센서 및 그 제조방법에 관한 것이다. 또한, 본 발명은 본 발명은 기판에 Nb 도핑된 N형 금속산화물로 형성되는 금속산화물층 및 상기 금속산화물층과 이종접합(heterojunction) 구조를 형성하는 P형 전도성 고분자로 구비되는 폴리머층을 포함하고, 상기 금속산화물층의 Nb 도핑양은 Nb 도핑된 N형 금속산화물의 총중량 대비 3 내지 4.5 wt%가 되게 함으로써, 비교적 간단한 공정으로 상온에서 작동 가능한 저전력의 가스센서를 제공할 수 있다. |
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