Memory Device Having Channel Structure

According to the present invention, a memory device comprises: a lower stacked structure formed on a substrate and including a first source layer and a second source layer disposed below the first source layer; an upper stacked structure disposed on the lower stacked structure; and a channel structu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SON YONG HOON, YANG HAN VIT
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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