COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SURFACE
Provided are a composition for treating a surface of a semiconductor, which can effectively reduce or remove contamination from a surface of a semiconductor when used for treatment such as polishing or cleaning, and is difficult to corrode metals such as a metal line, and to a method using the same....
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | Provided are a composition for treating a surface of a semiconductor, which can effectively reduce or remove contamination from a surface of a semiconductor when used for treatment such as polishing or cleaning, and is difficult to corrode metals such as a metal line, and to a method using the same. The composition for treating a surface of a semiconductor of the present invention comprises: (A) a polymer having a polymer chain having a repeating unit represented by formula (1); and (B) a chelating agent having a molecular weight of 500 or less. In the formula (1), R^1 represents a hydrogen atom or a methyl group, Z represents a group for forming an organic ammonium salt, -NR^5R^6 (herein, R^5 and R^6 are each independently a hydrogen atom or a substituted or unsubstituted hydrocarbon group), or a substituted or unsubstituted nitrogen-containing heterocyclic group, and X represents a single bond or a divalent linking group.
본 발명은 연마나 세정 등의 처리에 사용했을 때 반도체의 표면으로부터 오염을 효과적으로 저감 또는 제거할 수 있고, 또한 금속 배선 등의 금속을 부식시키기 어려운 반도체 표면 처리용 조성물 및 이를 사용한 방법을 제공하는 것. (A) 하기 식 (1)로 표시되는 반복 단위를 갖는 폴리머쇄를 갖는 중합체와 (B) 분자량이 500 이하인 킬레이트제를 함유하는, 반도체 표면 처리용 조성물.〔식 (1)에 있어서, R은, 수소 원자 또는 메틸기를 나타내고, Z는, 유기 암모늄염을 형성하는 기, -NRR(단, R및 R은, 서로 독립적으로, 수소 원자, 또는 치환 혹은 비치환된 탄화수소기를 나타낸다.), 또는 치환 혹은 비치환된 질소 함유 복소환기를 나타내고, X는, 단결합 또는 2가의 연결기를 나타낸다.〕 |
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