OPERATION METHOD OF NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE

According to an embodiment of the present invention, provided is an operating method of a nonvolatile memory device, which comprises the steps of: receiving a read command from an external device; responding to the read command and performing a first cell counting operation on a plurality of memory...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	SON HONG RAK, KONG JUNJIN, BANG JINBAE, SHIN DONGJIN, YOON PILSANG, OH EUN CHU, BYEON DAESEOK, KIM JISU, SONG TAEHYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	According to an embodiment of the present invention, provided is an operating method of a nonvolatile memory device, which comprises the steps of: receiving a read command from an external device; responding to the read command and performing a first cell counting operation on a plurality of memory cells based on a reference voltage; adjusting at least one read voltage of first to n^th read voltages based on a first result of the first cell counting operation, wherein n is a natural number greater than one; and performing a read operation corresponding to the read command with respect to the plurality of memory cells based on the at least one read voltage. 본 발명의 실시 예에 따른 불휘발성 메모리 장치의 동작 방법은 외부 장치로부터 읽기 커맨드를 수신하는 단계, 읽기 커맨드에 응답하여, 기준 전압을 기반으로 복수의 메모리 셀들에 대한 제1 셀 카운팅 동작을 수행하는 단계, 제1 셀 카운팅 동작의 제1 결과를 기반으로 제1 내지 제n 읽기 전압들 중 적어도 하나의 읽기 전압을 조절하는 단계(단 n은 1보다 큰 자연수), 및 적어도 하나의 읽기 전압을 기반으로, 복수의 메모리 셀들에 대하여 읽기 커맨드에 대응하는 읽기 동작을 수행하는 단계를 포함한다.