A sputtering target whose deposition rate is controlled and a method for manufacturing the same

The present invention relates to a sputtering target whose a deposition rate is controlled and a method for manufacturing the same. The present invention provides a sputtering target made of raw material powder consisting of a metal material selected from a metal group whose a particle structure is...

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Bibliographische Detailangaben
Hauptverfasser:	PARK JOO HYEON, HONG GIL SOO, KWON OH JIB
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS POWDER METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	The present invention relates to a sputtering target whose a deposition rate is controlled and a method for manufacturing the same. The present invention provides a sputtering target made of raw material powder consisting of a metal material selected from a metal group whose a particle structure is a body-centered cubic lattice, a face-centered cubic lattice, or a dense hexagonal lattice, wherein a surface fraction of a surface {001}, another surface {011}, and another surface {111} of a target material of the sputtering target is measured for a calculated velocity index to be 19.3% to 47.3%. 본 발명은 증착속도가 제어된 스퍼터링 타겟 및 이를 제조할 수 있는 방법과 관련된다. 본 발명은 실시예로, 입자 구조가 체심입방격자, 면심입방격자 또는 조밀육방격자인 금속군 중에서 선택되는 금속 소재로 이루어지는 원료 분말로 제조된 스퍼터링 타겟으로서, 상기 스퍼터링 타켓의 타켓물질의 {001}면, {011}면 및 {111}면의 면 분율을 측정하여 산출된 속도지수가 19.3% 내지 47.3%인 스퍼터링 타겟을 제시한다.