SEMICONDUCTOR DEVICE

According to one embodiment of the present invention, a semiconductor device comprises: a substrate; an n- type layer; an n+ type region; a p type region; a p+ type region; a gate insulating film; a gate electrode; a source electrode; and a drain electrode. The n+ type region is located on left and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	CHUN, DAE HWAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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