조밀한 OSG 필름용 실릴 가교된 알킬 화합물의 용도

저 유전 물질 및 이를 포함하는 필름은 집적 회로의 레벨 간 유전체 및 이를 제조하는 방법으로 사용될 때 개선된 성능으로 확인되었다. Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same....

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Bibliographische Detailangaben
Hauptverfasser:	ADAMCZYK ANDREW J, RIDGEWAY ROBERT GORDON, ENTLEY WILLIAM ROBERT, ACHTYL JENNIFER LYNN ANNE, THEODOROU KATHLEEN ESTHER, VRTIS RAYMOND NICHOLAS, SINATORE DINO
Format:	Patent
Sprache:	kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	저 유전 물질 및 이를 포함하는 필름은 집적 회로의 레벨 간 유전체 및 이를 제조하는 방법으로 사용될 때 개선된 성능으로 확인되었다. Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.