Diode complex device and method for manufacturing the same
The present invention provides a diode complex device capable of increasing frequency characteristics, and a manufacturing method thereof. According to an embodiment of the present invention, the diode complex device comprises: a first package including a filter unit filtering a high-speed signal; a...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | The present invention provides a diode complex device capable of increasing frequency characteristics, and a manufacturing method thereof. According to an embodiment of the present invention, the diode complex device comprises: a first package including a filter unit filtering a high-speed signal; a second package stacked on the first package in a flip chip method, and including a transient voltage suppressor (TVS) diode array having a protection function with regard to electric overload and static electricity; and a molding unit molding the second package.
다이오드 복합소자 및 그의 제조 방법이 제공된다. 본 발명의 실시예에 따른다이오드 복합소자는 고속신호를 필터링하는 필터부를 포함하는 제1패키지, 제1패키지 상에 플립칩 방식으로 적층되며, 전기적 과부하 및 정전기에 대한 보호기능을 갖는 TVS(Transient Voltage Suppressor) 다이오드 어레이를 포함하는 제2패키지, 및 제2패키지를 몰딩하는 몰딩부를 포함한다. |
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