HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS

The present invention relates to a hard mask composition comprising: a polymer including a structural unit represented by chemical formula 1; and a solvent, and to a pattern forming method using the hard mask composition. The hard mask composition has excellent heat resistance and etching resistance...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	YOON, BYE RI, PARK, YOU JUNG, LIM, SANG HAK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a hard mask composition comprising: a polymer including a structural unit represented by chemical formula 1; and a solvent, and to a pattern forming method using the hard mask composition. The hard mask composition has excellent heat resistance and etching resistance while securing solubility. In addition, the definition of the chemical formula 1 is the same as described in the specification. 하기 화학식 1로 표현되는 구조단위를 포함하는 중합체, 그리고 용매를 포함하는 하드마스크 조성물, 그리고 상기 하드마스크 조성물을 사용하는 패턴형성방법에 관한 것이다. [화학식 1]상기 화학식 1의 정의는 명세서 내 기재한 바와 같다.