MOSFET LOGIC CELL FORMED OF A RADIANT MOSFETMETAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

Provided is a logic cell formed of at least one metal oxide semiconductor field effect transistor (MOSFET), comprising: an I-gate N-type MOSFET in which an N+ layer, and a plurality of P+ layers formed at both side surfaces of the N+ layer or around an upper and a lower side surface of the N+ layer...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM JONGYEOL, LEE MINWOONG, CHO SEONGIK, LEE NAMHO, JEONG SANGHUN, HWANG YOUNGGWAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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