RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
The present invention relates to a composition for a resist underlayer film comprising: a polymer including a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2; and a solvent, and to a pattern forming method using the composition for a resist u...
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| creator | PARK, HYEON HAN, KWEN WOO CHOI, YOO JEONG JOO, BEOM JUN KWON, SOON HYUNG BAEK, JAE YEOL BAE, SHIN HYO |
| description | The present invention relates to a composition for a resist underlayer film comprising: a polymer including a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2; and a solvent, and to a pattern forming method using the composition for a resist underlayer film. In addition, the composition for a resist underlayer film can reduce the probability of defect occurrence and the definition of the chemical formula 1 and the chemical formula 2 is the same as described in the specification.
하기 화학식 1로 표시되는 구조단위 및 하기 화학식 2로 표시되는 구조단위를 포함하는 중합체, 그리고 용매를 포함하는 레지스트 하층막용 조성물, 및 상기 레지스트 하층막용 조성물을 이용한 패턴형성방법을 제공한다. [화학식 1][화학식 2]상기 화학식 1 및 화학식 2의 정의는 명세서 내에 기재한 바와 같다. |
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하기 화학식 1로 표시되는 구조단위 및 하기 화학식 2로 표시되는 구조단위를 포함하는 중합체, 그리고 용매를 포함하는 레지스트 하층막용 조성물, 및 상기 레지스트 하층막용 조성물을 이용한 패턴형성방법을 제공한다. [화학식 1][화학식 2]상기 화학식 1 및 화학식 2의 정의는 명세서 내에 기재한 바와 같다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190509&DB=EPODOC&CC=KR&NR=20190049171A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190509&DB=EPODOC&CC=KR&NR=20190049171A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK, HYEON</creatorcontrib><creatorcontrib>HAN, KWEN WOO</creatorcontrib><creatorcontrib>CHOI, YOO JEONG</creatorcontrib><creatorcontrib>JOO, BEOM JUN</creatorcontrib><creatorcontrib>KWON, SOON HYUNG</creatorcontrib><creatorcontrib>BAEK, JAE YEOL</creatorcontrib><creatorcontrib>BAE, SHIN HYO</creatorcontrib><title>RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><description>The present invention relates to a composition for a resist underlayer film comprising: a polymer including a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2; and a solvent, and to a pattern forming method using the composition for a resist underlayer film. In addition, the composition for a resist underlayer film can reduce the probability of defect occurrence and the definition of the chemical formula 1 and the chemical formula 2 is the same as described in the specification.
하기 화학식 1로 표시되는 구조단위 및 하기 화학식 2로 표시되는 구조단위를 포함하는 중합체, 그리고 용매를 포함하는 레지스트 하층막용 조성물, 및 상기 레지스트 하층막용 조성물을 이용한 패턴형성방법을 제공한다. [화학식 1][화학식 2]상기 화학식 1 및 화학식 2의 정의는 명세서 내에 기재한 바와 같다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgKcg32DA5RCPVzcQ3ycYx0DVJw9vcN8A_2DPH091Nw9HNR8HUN8fB3UfB3U3DzD_L19HNXCHAMCXEN8gtWCA0GcUM8XJE18TCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSSeO8gIwNDSwMDE0tDc0NHY-JUAQDLSTDp</recordid><startdate>20190509</startdate><enddate>20190509</enddate><creator>PARK, HYEON</creator><creator>HAN, KWEN WOO</creator><creator>CHOI, YOO JEONG</creator><creator>JOO, BEOM JUN</creator><creator>KWON, SOON HYUNG</creator><creator>BAEK, JAE YEOL</creator><creator>BAE, SHIN HYO</creator><scope>EVB</scope></search><sort><creationdate>20190509</creationdate><title>RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><author>PARK, HYEON ; HAN, KWEN WOO ; CHOI, YOO JEONG ; JOO, BEOM JUN ; KWON, SOON HYUNG ; BAEK, JAE YEOL ; BAE, SHIN HYO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20190049171A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2019</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK, HYEON</creatorcontrib><creatorcontrib>HAN, KWEN WOO</creatorcontrib><creatorcontrib>CHOI, YOO JEONG</creatorcontrib><creatorcontrib>JOO, BEOM JUN</creatorcontrib><creatorcontrib>KWON, SOON HYUNG</creatorcontrib><creatorcontrib>BAEK, JAE YEOL</creatorcontrib><creatorcontrib>BAE, SHIN HYO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK, HYEON</au><au>HAN, KWEN WOO</au><au>CHOI, YOO JEONG</au><au>JOO, BEOM JUN</au><au>KWON, SOON HYUNG</au><au>BAEK, JAE YEOL</au><au>BAE, SHIN HYO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION</title><date>2019-05-09</date><risdate>2019</risdate><abstract>The present invention relates to a composition for a resist underlayer film comprising: a polymer including a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2; and a solvent, and to a pattern forming method using the composition for a resist underlayer film. In addition, the composition for a resist underlayer film can reduce the probability of defect occurrence and the definition of the chemical formula 1 and the chemical formula 2 is the same as described in the specification.
하기 화학식 1로 표시되는 구조단위 및 하기 화학식 2로 표시되는 구조단위를 포함하는 중합체, 그리고 용매를 포함하는 레지스트 하층막용 조성물, 및 상기 레지스트 하층막용 조성물을 이용한 패턴형성방법을 제공한다. [화학식 1][화학식 2]상기 화학식 1 및 화학식 2의 정의는 명세서 내에 기재한 바와 같다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION |
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