RESIST UNDERLAYER COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

The present invention relates to a composition for a resist underlayer film comprising: a polymer including a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2; and a solvent, and to a pattern forming method using the composition for a resist u...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	PARK, HYEON, HAN, KWEN WOO, CHOI, YOO JEONG, JOO, BEOM JUN, KWON, SOON HYUNG, BAEK, JAE YEOL, BAE, SHIN HYO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a composition for a resist underlayer film comprising: a polymer including a structural unit represented by chemical formula 1 and a structural unit represented by chemical formula 2; and a solvent, and to a pattern forming method using the composition for a resist underlayer film. In addition, the composition for a resist underlayer film can reduce the probability of defect occurrence and the definition of the chemical formula 1 and the chemical formula 2 is the same as described in the specification. 하기 화학식 1로 표시되는 구조단위 및 하기 화학식 2로 표시되는 구조단위를 포함하는 중합체, 그리고 용매를 포함하는 레지스트 하층막용 조성물, 및 상기 레지스트 하층막용 조성물을 이용한 패턴형성방법을 제공한다. [화학식 1][화학식 2]상기 화학식 1 및 화학식 2의 정의는 명세서 내에 기재한 바와 같다.